SCHEMBL3481702

SCHEMBL3481702

CCCCO[SiH](OCCCC)c1ccc(C)cc1

nearest known ligand 0.43

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
PTGES O14684 1/20 0.36
ALOX5 P09917 1/20 0.36
PPARG P37231 1/20 0.36
PPARA Q07869 1/20 0.36
DRD2 P14416 1/20 0.36
DRD4 P21917 1/20 0.36
DRD3 P35462 1/20 0.36
LTA4H P09960 1/20 0.36
NR5A1 Q13285 1/20 0.36
TSHR P16473 2/20 0.36
TP53 P04637 1/20 0.36
L3MBTL1 Q9Y468 3/20 0.35
TDP1 Q9NUW8 1/20 0.35
PLA2G4B P0C869 1/20 0.35
HPGD P15428 1/20 0.35
HTT P42858 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705460 0.92 LTA4H (0.41) LTA4HNR5A1TSHRTP53L3MBTL1
SCHEMBL3481812 0.88 ACHE (0.35) MEN1KMT2ADRD2DRD4DRD3
SCHEMBL705223 0.85 NR5A1 (0.44) LTA4HNR5A1TSHRTP53PLA2G4B
SCHEMBL3481586 0.82 NR1I2 (0.42) KMT2ALTA4HNR5A1TSHRTP53
SCHEMBL3482301 0.82 ALDH1A1 (0.39) LTA4HNR5A1TSHRL3MBTL1TDP1
SCHEMBL8954023 0.82 CYP1A2 (0.50) DRD3LTA4HNR5A1TSHRTP53
SCHEMBL2769933 0.82 LTA4H (0.47) LTA4HTSHRTP53L3MBTL1TDP1
SCHEMBL3482399 0.80 CNR1 (0.40) LTA4HNR5A1TSHRTP53L3MBTL1
SCHEMBL3482269 0.79 ACHE (0.38) TDP1HTT
SCHEMBL19809134 0.78 NR5A1 (0.56) MEN1KMT2AALOX5LTA4HNR5A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed