SCHEMBL3482301

SCHEMBL3482301

CCCCO[SiH](OCCCC)c1ccc(CC)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.39
SMN1; SMN2 Q16637 4/20 0.39
LMNA P02545 2/20 0.39
HPGD P15428 2/20 0.39
MAPT P10636 1/20 0.39
TSHR P16473 2/20 0.38
TDP1 Q9NUW8 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
RXRA P19793 1/20 0.38
RXRB P28702 1/20 0.38
CYP2C19 P33261 2/20 0.37
CYP1A2 P05177 2/20 0.37
CYP2D6 P10635 2/20 0.37
KDM4E B2RXH2 1/20 0.37
PDE4A P27815 1/20 0.37
HIF1A Q16665 1/20 0.37
HDAC10 Q969S8 1/20 0.37
HDAC6 Q9UBN7 1/20 0.37
LPL P06858 1/20 0.36
LIPG Q9Y5X9 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705460 0.90 LTA4H (0.41) SMN1; SMN2LMNATSHRTDP1L3MBTL1
SCHEMBL3482172 0.88 ALDH1A1 (0.42) ALDH1A1SMN1; SMN2LMNATSHRTDP1
SCHEMBL705223 0.84 NR5A1 (0.44) ALDH1A1LMNAMAPTTSHRMAPK1
SCHEMBL3481702 0.82 MEN1 (0.37) HPGDTSHRTDP1L3MBTL1PLA2G4B
SCHEMBL3481586 0.81 NR1I2 (0.42) TSHRLTA4HNR5A1
SCHEMBL8954023 0.81 CYP1A2 (0.50) ALDH1A1LMNAMAPTTSHRTDP1
SCHEMBL2769933 0.80 LTA4H (0.47) ALDH1A1TSHRTDP1L3MBTL1CYP2C19
SCHEMBL3482481 0.79 ALDH1A1 (0.40) ALDH1A1SMN1; SMN2LMNATSHRTDP1
SCHEMBL11054435 0.79 ALDH1A1 (0.50) ALDH1A1SMN1; SMN2LMNAHPGDKDM4E
SCHEMBL19809134 0.77 NR5A1 (0.56) ALDH1A1SMN1; SMN2LMNAMAPTTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed