SCHEMBL3415673

SCHEMBL3415673

CCCCC(O[SiH3])(c1ccccc1)c1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
KIF11 P52732 4/20 0.38
SIGMAR1 Q99720 2/20 0.38
LTA4H P09960 2/20 0.36
ESR1 P03372 2/20 0.36
ESR2 Q92731 2/20 0.36
KCNN4 O15554 1/20 0.35
MAPK1 P28482 1/20 0.34
GAA P10253 1/20 0.34
LMNA P02545 1/20 0.34
EBP Q15125 1/20 0.34
KCNH2 Q12809 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481756 0.96 LTA4H (0.38) KIF11SIGMAR1LTA4HKCNN4MAPK1
SCHEMBL3482436 0.88 KCNN4 (0.38) KIF11SIGMAR1ESR1ESR2KCNN4
SCHEMBL706928 0.85 KIF11 (0.38) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL2922377 0.82 LMNA (0.45) KIF11LTA4HESR1ESR2KCNN4
SCHEMBL28443465 0.81 KIF11 (0.38) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL7785965 0.81 SIGMAR1 (0.40) SIGMAR1LTA4HESR1MAPK1GAA
SCHEMBL10612623 0.81 KIF11 (0.52) KIF11KCNH2
SCHEMBL2238102 0.79 KCNN4 (0.40) KIF11SIGMAR1KCNN4MAPK1LMNA
SCHEMBL9304142 0.79 KIF11 (0.37) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL3481672 0.79 MAPK1 (0.38) KIF11SIGMAR1LTA4HESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN claimed
CN-114085382-A Hydrogen-containing poly titanium boron siloxane flame retardant, and preparation method and application thereof 铨盛聚碳科技股份有限公司 2022-02-25 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
EP-2205644-A1 METHOD FOR PRODUCING AN AQUEOUS COMPOSITE-PARTICLE DISPERSION BASF SE (DE) 2010-07-14 EP disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-7604866-B2 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2009-10-20 US disclosed
WO-2009053317-A1 METHOD FOR PRODUCING AN AQUEOUS COMPOSITE-PARTICLE DISPERSION BASF SE (DE) 2009-04-30 WO disclosed
US-20060269724-A1 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2006-11-30 US disclosed
CN-1837221-A Production processes for triorganomonochlorosilanes HOKKO CHEM IND CO (JP) 2006-09-27 CN disclosed
CN-1612886-A Method for producing triorgano-monoalkoxysilanes and method for producing triorgano-monochlorosilanes HOKKO CHEM IND CO (JP) 2005-05-04 CN disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed