SCHEMBL3481896

SCHEMBL3481896

CCCCCC(CC)[SiH2]O

nearest known ligand 0.44

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.41
LCK P06239 1/20 0.40
PPARD Q03181 1/20 0.40
ZDHHC20 Q5W0Z9 1/20 0.40
ZDHHC2 Q9UIJ5 1/20 0.40
OPRM1 P35372 1/20 0.39
FDPS P14324 4/20 0.38
ACE2 Q9BYF1 1/20 0.38
GPR84 Q9NQS5 3/20 0.37
CA1 P00915 2/20 0.37
SPHK1 Q9NYA1 1/20 0.37
FFAR1 O14842 1/20 0.37
ALDH1A1 P00352 1/20 0.36
MAPT P10636 1/20 0.35
TP53 P04637 1/20 0.35
LAP3 P28838 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481430 0.92
SCHEMBL3482205 0.81 ALDH1A1 (0.40) LMNALCKPPARDZDHHC20ZDHHC2
SCHEMBL16044986 0.81
SCHEMBL3481725 0.75 OPRM1 (0.39) LMNAOPRM1FDPSACE2GPR84
SCHEMBL3482335 0.72
SCHEMBL16331142 0.71 OPRM1 (0.36) LMNAOPRM1FDPSACE2GPR84
SCHEMBL10588439 0.70 SPHK1 (0.46) LMNAOPRM1FDPSACE2GPR84
SCHEMBL132565 0.67 LMNA (0.42) LMNAOPRM1FDPSACE2GPR84
SCHEMBL11395225 0.67 DNM1 (0.42) LMNAOPRM1FDPSACE2GPR84
3-Octanol SCHEMBL6826944 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed