SCHEMBL3481756

SCHEMBL3481756

CCCCCC(O[SiH3])(c1ccccc1)c1ccccc1

nearest known ligand 0.47

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.38
SIGMAR1 Q99720 3/20 0.38
GAA P10253 1/20 0.37
EBP Q15125 1/20 0.37
KCNN4 O15554 1/20 0.35
KIF11 P52732 3/20 0.35
CNR1 P21554 1/20 0.35
CNR2 P34972 1/20 0.35
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
ATM Q13315 1/20 0.35
MAPK1 P28482 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3415673 0.96 KIF11 (0.38) LTA4HSIGMAR1GAAEBPKCNN4
SCHEMBL3482436 0.88 KCNN4 (0.38) SIGMAR1KCNN4KIF11MEN1KMT2A
SCHEMBL7785965 0.85 SIGMAR1 (0.40) LTA4HSIGMAR1GAAEBPCNR1
SCHEMBL8525821 0.83 SIGMAR1 (0.39) LTA4HSIGMAR1GAAEBPCNR1
SCHEMBL11124047 0.81 LTA4H (0.36) LTA4HSIGMAR1GAAEBPKCNN4
SCHEMBL706928 0.81 KIF11 (0.38) LTA4HSIGMAR1GAAEBPKCNN4
SCHEMBL10612623 0.81 KIF11 (0.52) KIF11
SCHEMBL227541 0.80 SIGMAR1 (0.37) LTA4HSIGMAR1GAAEBPCNR1
SCHEMBL1406140 0.80 SIGMAR1 (0.37) LTA4HSIGMAR1GAAEBPCNR1
SCHEMBL7107589 0.80 SIGMAR1 (0.37) LTA4HSIGMAR1GAAEBPCNR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed