SCHEMBL3481964

SCHEMBL3481964

CCc1ccc(-c2ccccc2)cc1[SiH2]O

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
BCL2 P10415 1/20 0.42
MAPT P10636 4/20 0.42
SMN1; SMN2 Q16637 3/20 0.42
L3MBTL1 Q9Y468 2/20 0.42
DCLRE1A Q6PJP8 1/20 0.40
DCLRE1B Q9H816 1/20 0.40
HPGD P15428 2/20 0.40
PTGS2 P35354 1/20 0.39
ALDH1A1 P00352 2/20 0.39
ALOX5 P09917 1/20 0.38
CYP1A2 P05177 1/20 0.38
HNF4A P41235 2/20 0.37
ACMSD Q8TDX5 2/20 0.37
DHFR P00374 1/20 0.37
MCL1 Q07820 1/20 0.37
HSD17B1 P14061 2/20 0.37
KDM4E B2RXH2 1/20 0.37
AGTR1 P30556 1/20 0.37
RXRA P19793 1/20 0.36
RXRB P28702 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481981 0.82 BCL2 (0.39) BCL2MAPTSMN1; SMN2L3MBTL1DCLRE1A
SCHEMBL28992451 0.77 DCLRE1A (0.47) BCL2MAPTSMN1; SMN2L3MBTL1DCLRE1A
SCHEMBL30380433 0.77 DCLRE1A (0.47) BCL2MAPTSMN1; SMN2L3MBTL1DCLRE1A
SCHEMBL4199791 0.76 ALOX5 (0.57) BCL2MAPTSMN1; SMN2L3MBTL1DCLRE1A
SCHEMBL6114437 0.74 GABRA1 (0.46) MAPTL3MBTL1ALDH1A1
SCHEMBL4888958 0.73 MAPT (0.53) BCL2MAPTSMN1; SMN2L3MBTL1DCLRE1A
SCHEMBL31570069 0.73 MAPT (0.53) BCL2MAPTSMN1; SMN2L3MBTL1DCLRE1A
SCHEMBL25047111 0.72 DCLRE1A (0.43) BCL2MAPTSMN1; SMN2L3MBTL1DCLRE1A
SCHEMBL17859649 0.72 FFAR1 (0.43) BCL2MAPTSMN1; SMN2L3MBTL1DCLRE1A
SCHEMBL455341 0.72 CRHBP (0.45) BCL2MAPTSMN1; SMN2L3MBTL1DCLRE1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed