SCHEMBL3482005

SCHEMBL3482005

CCc1ccc(-c2ccccc2)cc1[SiH](OC)OC

nearest known ligand 0.43

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
BCL2 P10415 1/20 0.41
RXRA P19793 1/20 0.38
RXRB P28702 1/20 0.38
EGFR P00533 2/20 0.37
MAPT P10636 4/20 0.36
HPGD P15428 3/20 0.36
KDM4E B2RXH2 3/20 0.36
ALDH1A1 P00352 2/20 0.36
SMN1; SMN2 Q16637 2/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
DCLRE1A Q6PJP8 1/20 0.35
DCLRE1B Q9H816 1/20 0.35
GAA P10253 1/20 0.35
CYP2C19 P33261 1/20 0.34
PTGS2 P35354 1/20 0.34
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482703 0.85 RXRA (0.40) BCL2RXRARXRBEGFRMAPT
SCHEMBL3482332 0.83 BCL2 (0.41) BCL2RXRARXRBEGFRMAPT
SCHEMBL3482627 0.79 BCL2 (0.46) BCL2RXRARXRBMAPTHPGD
SCHEMBL3482584 0.79 BCL2 (0.42) BCL2RXRARXRBMAPTHPGD
SCHEMBL3481714 0.75 KDM4E (0.37) MAPTHPGDKDM4EALDH1A1SMN1; SMN2
SCHEMBL30380433 0.74 DCLRE1A (0.47) BCL2MAPTHPGDALDH1A1SMN1; SMN2
SCHEMBL28992451 0.74 DCLRE1A (0.47) BCL2MAPTHPGDALDH1A1SMN1; SMN2
SCHEMBL17859653 0.74 HPGD (0.49) EGFRMAPTHPGDKDM4EALDH1A1
SCHEMBL31570069 0.71 MAPT (0.53) BCL2MAPTHPGDKDM4EALDH1A1
SCHEMBL4888958 0.71 MAPT (0.53) BCL2MAPTHPGDKDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed