SCHEMBL3482332

SCHEMBL3482332

CCCO[SiH](OCCC)c1cc(-c2ccccc2)ccc1CC

nearest known ligand 0.41

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
BCL2 P10415 1/20 0.41
RXRA P19793 2/20 0.38
RXRB P28702 2/20 0.38
SMN1; SMN2 Q16637 2/20 0.38
L3MBTL1 Q9Y468 2/20 0.38
HPGD P15428 2/20 0.38
MAPT P10636 2/20 0.37
LMNA P02545 1/20 0.36
NPC1 O15118 1/20 0.36
DCLRE1A Q6PJP8 1/20 0.36
DCLRE1B Q9H816 1/20 0.36
PTGS2 P35354 1/20 0.35
EGFR P00533 1/20 0.35
PTPN11 Q06124 1/20 0.35
ALDH1A1 P00352 1/20 0.34
CYP1A2 P05177 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482703 0.88 RXRA (0.40) BCL2RXRARXRBSMN1; SMN2L3MBTL1
SCHEMBL3482005 0.83 BCL2 (0.41) BCL2RXRARXRBSMN1; SMN2L3MBTL1
SCHEMBL3482627 0.79 BCL2 (0.46) BCL2RXRARXRBSMN1; SMN2L3MBTL1
SCHEMBL4281348 0.79 ALDH1A1 (0.40) SMN1; SMN2L3MBTL1HPGDMAPTLMNA
SCHEMBL3481563 0.78 KDM4E (0.35) SMN1; SMN2L3MBTL1HPGDMAPTLMNA
SCHEMBL3482584 0.76 BCL2 (0.42) BCL2RXRARXRBSMN1; SMN2L3MBTL1
SCHEMBL2961139 0.72 ALDH1A1 (0.42) SMN1; SMN2L3MBTL1HPGDMAPTLMNA
SCHEMBL28992451 0.70 DCLRE1A (0.47) BCL2SMN1; SMN2L3MBTL1HPGDMAPT
SCHEMBL30380433 0.70 DCLRE1A (0.47) BCL2SMN1; SMN2L3MBTL1HPGDMAPT
SCHEMBL3481504 0.70 PPARG (0.38) SMN1; SMN2L3MBTL1HPGDMAPTLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed