SCHEMBL3482584

SCHEMBL3482584

CCc1ccc(-c2ccccc2)cc1[SiH](Cl)Cl

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
BCL2 P10415 1/20 0.42
SMN1; SMN2 Q16637 3/20 0.38
L3MBTL1 Q9Y468 3/20 0.38
MAPT P10636 3/20 0.38
DCLRE1A Q6PJP8 1/20 0.37
DCLRE1B Q9H816 1/20 0.37
RXRA P19793 2/20 0.36
RXRB P28702 2/20 0.36
HPGD P15428 2/20 0.36
PTGS2 P35354 1/20 0.36
ESR2 Q92731 1/20 0.35
ALDH1A1 P00352 1/20 0.35
CYP1A2 P05177 2/20 0.35
ALOX5 P09917 1/20 0.34
MEN1 O00255 1/20 0.34
APAF1 O14727 1/20 0.34
NPC1 O15118 1/20 0.34
LMNA P02545 1/20 0.34
THRB P10828 1/20 0.34
XBP1 P17861 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482627 0.82 BCL2 (0.46) BCL2SMN1; SMN2L3MBTL1MAPTDCLRE1A
SCHEMBL3482005 0.79 BCL2 (0.41) BCL2SMN1; SMN2L3MBTL1MAPTDCLRE1A
SCHEMBL3482703 0.78 RXRA (0.40) BCL2SMN1; SMN2L3MBTL1MAPTDCLRE1A
SCHEMBL30380433 0.77 DCLRE1A (0.47) BCL2SMN1; SMN2L3MBTL1MAPTDCLRE1A
SCHEMBL28992451 0.77 DCLRE1A (0.47) BCL2SMN1; SMN2L3MBTL1MAPTDCLRE1A
SCHEMBL3482332 0.76 BCL2 (0.41) BCL2SMN1; SMN2L3MBTL1MAPTDCLRE1A
SCHEMBL458111 0.76 ESR2 (0.52) BCL2SMN1; SMN2L3MBTL1MAPTDCLRE1A
SCHEMBL3481981 0.75 BCL2 (0.39) BCL2SMN1; SMN2L3MBTL1MAPTDCLRE1A
SCHEMBL115194 0.74 MGLL (0.42) L3MBTL1MAPTALDH1A1LMNANPSR1
SCHEMBL31570069 0.73 MAPT (0.53) BCL2SMN1; SMN2L3MBTL1MAPTDCLRE1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed