SCHEMBL3482008

SCHEMBL3482008

CCc1ccc([Si](OC)(OC)c2ccccc2)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.50
RAB9A P51151 5/20 0.37
ALDH1A1 P00352 2/20 0.36
CYP1A2 P05177 2/20 0.36
CYP2A6 P11509 2/20 0.36
NPC1 O15118 3/20 0.36
SMN1; SMN2 Q16637 3/20 0.36
L3MBTL1 Q9Y468 3/20 0.36
LMNA P02545 1/20 0.36
MAPT P10636 1/20 0.36
MAPK1 P28482 1/20 0.36
PPARG P37231 1/20 0.36
PPARA Q07869 1/20 0.36
LTA4H P09960 1/20 0.35
KDM4E B2RXH2 1/20 0.35
KIF11 P52732 2/20 0.35
TAAR1 Q96RJ0 1/20 0.34
ALOX15B O15296 1/20 0.34
CYP3A4 P08684 1/20 0.34
GAA P10253 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1562733 0.92 TP53 (0.40) TP53RAB9AALDH1A1CYP2A6NPC1
SCHEMBL706592 0.85 ESR1 (0.41) ALDH1A1CYP1A2SMN1; SMN2LMNAMAPT
SCHEMBL3482513 0.84 TP53 (0.50) TP53RAB9AALDH1A1CYP1A2CYP2A6
SCHEMBL49008 0.82 CA4 (0.41) RAB9AALDH1A1CYP1A2NPC1SMN1; SMN2
SCHEMBL27596877 0.82 CA4 (0.41) RAB9AALDH1A1CYP1A2NPC1SMN1; SMN2
SCHEMBL3482705 0.82 TP53 (0.48) TP53RAB9AALDH1A1CYP1A2CYP2A6
SCHEMBL11588483 0.80 CA1 (0.41) TP53ALDH1A1CYP1A2SMN1; SMN2L3MBTL1
SCHEMBL27743669 0.80 CA4 (0.39) ALDH1A1CYP1A2SMN1; SMN2LMNAMAPT
SCHEMBL3482334 0.79 TP53 (0.45) TP53RAB9AALDH1A1CYP1A2CYP2A6
Hexane SCHEMBL27604181 0.79 LTA4H (0.41) TP53MAPK1LTA4HCYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed