SCHEMBL3482513

SCHEMBL3482513

CCc1ccc([Si](OC)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.50
RAB9A P51151 5/20 0.37
ALDH1A1 P00352 2/20 0.36
CYP1A2 P05177 2/20 0.36
CYP2A6 P11509 2/20 0.36
NPC1 O15118 3/20 0.36
SMN1; SMN2 Q16637 3/20 0.36
L3MBTL1 Q9Y468 3/20 0.36
LMNA P02545 1/20 0.36
MAPT P10636 1/20 0.36
MAPK1 P28482 1/20 0.36
PPARG P37231 1/20 0.36
PPARA Q07869 1/20 0.36
LTA4H P09960 1/20 0.35
KDM4E B2RXH2 1/20 0.35
KIF11 P52732 2/20 0.35
TAAR1 Q96RJ0 1/20 0.34
ALOX15B O15296 1/20 0.34
CYP3A4 P08684 1/20 0.34
GAA P10253 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705043 0.85 ESR1 (0.41) ALDH1A1CYP1A2SMN1; SMN2LMNAMAPT
SCHEMBL3482008 0.84 TP53 (0.50) TP53RAB9AALDH1A1CYP1A2CYP2A6
SCHEMBL49088 0.82 CA4 (0.41) RAB9AALDH1A1CYP1A2NPC1SMN1; SMN2
SCHEMBL3482491 0.82 TP53 (0.48) TP53RAB9AALDH1A1CYP1A2CYP2A6
SCHEMBL3482155 0.79 TP53 (0.45) TP53RAB9AALDH1A1CYP1A2CYP2A6
SCHEMBL17770825 0.79 TP53 (0.59) TP53RAB9AALDH1A1CYP1A2CYP2A6
SCHEMBL38651049 0.78 TP53 (0.48) TP53RAB9AALDH1A1CYP1A2CYP2A6
SCHEMBL5416836 0.77 ESR1 (0.35) POLB
SCHEMBL3482517 0.77 ACHE (0.43) RAB9AALDH1A1NPC1SMN1; SMN2L3MBTL1
SCHEMBL16283130 0.76 LTA4H (0.53) TP53RAB9AALDH1A1SMN1; SMN2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed