SCHEMBL3482334

SCHEMBL3482334

CCCO[Si](OCCC)(c1ccccc1)c1ccc(CC)cc1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.45
CYP1A2 P05177 2/20 0.38
L3MBTL1 Q9Y468 2/20 0.38
ALOX15B O15296 1/20 0.38
CYP3A4 P08684 1/20 0.38
GAA P10253 1/20 0.38
CYP2D6 P10635 1/20 0.38
CYP2C9 P11712 1/20 0.38
CYP2C19 P33261 1/20 0.38
CYP2A6 P11509 1/20 0.37
RAB9A P51151 4/20 0.37
LMNA P02545 3/20 0.37
ALDH1A1 P00352 3/20 0.37
MAPT P10636 3/20 0.37
SMN1; SMN2 Q16637 2/20 0.37
NPC1 O15118 2/20 0.37
MAPK1 P28482 1/20 0.37
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
KDM4E B2RXH2 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706124 0.91 LMNA (0.38) TP53GAALMNAALDH1A1SMN1; SMN2
SCHEMBL106121 0.89 LMNA (0.39) TP53GAALMNAALDH1A1SMN1; SMN2
SCHEMBL3482155 0.86 TP53 (0.45) TP53CYP1A2L3MBTL1ALOX15BCYP3A4
SCHEMBL3482705 0.85 TP53 (0.48) TP53CYP1A2L3MBTL1ALOX15BCYP3A4
SCHEMBL3481473 0.84 LMNA (0.36) CYP2C19RAB9ALMNAALDH1A1MAPT
SCHEMBL19809312 0.83 LMNA (0.36) GAALMNAALDH1A1MEN1KMT2A
SCHEMBL16476588 0.80 ALDH1A1 (0.35) LMNAALDH1A1MEN1KMT2AHTT
SCHEMBL3482008 0.79 TP53 (0.50) TP53CYP1A2L3MBTL1ALOX15BCYP3A4
SCHEMBL702280 0.79 LTA4H (0.46) CYP1A2L3MBTL1CYP3A4CYP2D6CYP2C9
SCHEMBL19809409 0.79 LMNA (0.36) TP53CYP1A2GAACYP2C19LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed