SCHEMBL3482045

SCHEMBL3482045

CCCC[SiH](O)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
PCSK9 Q8NBP7 1/20 0.39
PTGS2 P35354 1/20 0.38
CES2 O00748 3/20 0.37
CES1 P23141 3/20 0.37
LTA4H P09960 1/20 0.35
GAA P10253 1/20 0.35
MAPT P10636 1/20 0.35
ALOX12 P18054 1/20 0.35
CRHBP P24387 1/20 0.35
HTT P42858 1/20 0.35
CRHR2 Q13324 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
NAAA Q02083 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.33
LMNA P02545 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10587114 0.92 CES2 (0.41) PCSK9CES2CES1HTTNAAA
SCHEMBL272425 0.86 TP53 (0.35) PCSK9PTGS2CES2CES1GAA
SCHEMBL417994 0.77 LTA4H (0.38) PCSK9PTGS2CES2CES1LTA4H
SCHEMBL114779 0.77 LTA4H (0.38) PCSK9PTGS2CES2CES1LTA4H
SCHEMBL6114431 0.77 TP53 (0.38) PCSK9CES2CES1GAAMAPT
SCHEMBL7815018 0.76 LTA4H (0.36) PCSK9PTGS2CES2CES1LTA4H
SCHEMBL704686 0.74 PCSK9 (0.39) PCSK9PTGS2CES2CES1LTA4H
SCHEMBL704628 0.74 LTA4H (0.35) PCSK9PTGS2CES2CES1LTA4H
SCHEMBL8992249 0.74 CES2 (0.37) PCSK9PTGS2CES2CES1LTA4H
SCHEMBL713125 0.74 LTA4H (0.35) PCSK9PTGS2CES2CES1LTA4H

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113168101-B Photosensitive resin composition, method for producing pattern cured film, interlayer insulating film, coverlay, surface protective film, and electronic component 艾曲迪微系统股份有限公司 2025-02-18 CN disclosed
CN-113168102-B Photosensitive resin composition, method for producing pattern cured product, interlayer insulating film, coverlay, surface protective film, and electronic component 艾曲迪微系统股份有限公司 2024-11-19 CN disclosed
CN-114502617-B Polyimide precursor, photosensitive resin composition, interlayer insulating film, covercoat, surface protective film, and electronic component 艾曲迪微系统股份有限公司 2024-05-03 CN disclosed
CN-117836927-A Resin cured film, semiconductor device, and method for manufacturing semiconductor device 株式会社力森诺科 2024-04-05 CN disclosed
CN-117730398-A Resin composition for dicing protective layer and method for processing semiconductor wafer 株式会社力森诺科 2024-03-19 CN disclosed
CN-117280447-A Photosensitive resin composition selection method, pattern cured film production method, cured film, semiconductor device, and semiconductor device production method 株式会社力森诺科 2023-12-22 CN disclosed
CN-113820920-B Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device 旭化成株式会社 2023-07-04 CN disclosed
CN-116194840-A Photosensitive resin composition, permanent resist, method for forming permanent resist, and method for inspecting cured film for permanent resist 株式会社力森诺科 2023-05-30 CN disclosed
WO-2017164813-A1 ION PAIR CATALYSIS OF TUNGSTATE AND MOLYBDATE NANYANG TECHNOLOGICAL UNIVERSITY (SG) 2017-09-28 WO disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8791221-B2 Addition-curable metallosiloxane compound DAICEL CORPORATION (JP) 2014-07-29 US disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
EP-2650319-A1 ADDITION-CURABLE METALLOSILOXANE COMPOUND Daicel Corporation (JP) 2013-10-16 EP disclosed
US-20130267653-A1 ADDITION-CURABLE METALLOSILOXANE COMPOUND DAICEL CORPORATION (JP) 2013-10-10 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130267653-A1 ADDITION-CURABLE METALLOSILOXANE COMPOUND B2M, MSI2, MNS1 PCSK9 4133/4885PTGS2 3310/4885CES2 4550/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.