SCHEMBL3482155

SCHEMBL3482155

CCCO[Si](c1ccccc1)(c1ccccc1)c1ccc(CC)cc1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.45
DUT P33316 1/20 0.37
LMNA P02545 3/20 0.37
CYP1A2 P05177 2/20 0.35
L3MBTL1 Q9Y468 2/20 0.35
ALOX15B O15296 1/20 0.35
CYP3A4 P08684 1/20 0.35
GAA P10253 1/20 0.35
CYP2D6 P10635 1/20 0.35
CYP2C9 P11712 1/20 0.35
CYP2C19 P33261 1/20 0.35
ALDH1A1 P00352 4/20 0.34
RAB9A P51151 3/20 0.34
MAPT P10636 3/20 0.33
SMN1; SMN2 Q16637 3/20 0.33
HTT P42858 2/20 0.33
TSHR P16473 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
NPC1 O15118 1/20 0.33
MAPK1 P28482 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10604501 0.93 TP53 (0.36) TP53LMNAL3MBTL1ALDH1A1RAB9A
SCHEMBL703766 0.91 DUT (0.41) TP53DUTLMNAALDH1A1TSHR
SCHEMBL703110 0.89 DUT (0.42) TP53DUTLMNAALDH1A1TSHR
SCHEMBL3482334 0.86 TP53 (0.45) TP53LMNACYP1A2L3MBTL1ALOX15B
SCHEMBL3482491 0.85 TP53 (0.48) TP53LMNACYP1A2L3MBTL1ALDH1A1
SCHEMBL3482024 0.84 DUT (0.38) TP53DUTLMNAALDH1A1RAB9A
SCHEMBL38651049 0.81 TP53 (0.48) TP53LMNACYP1A2L3MBTL1ALDH1A1
SCHEMBL3482513 0.79 TP53 (0.50) TP53LMNACYP1A2L3MBTL1ALOX15B
SCHEMBL708046 0.79 DUT (0.46) DUTCYP1A2L3MBTL1CYP3A4CYP2D6
SCHEMBL3481718 0.77 DUT (0.36) DUTLMNAALDH1A1RAB9AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed