SCHEMBL3482491

SCHEMBL3482491

CCO[Si](c1ccccc1)(c1ccccc1)c1ccc(CC)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.48
CXCR4 P61073 1/20 0.36
RAB9A P51151 5/20 0.36
SMN1; SMN2 Q16637 3/20 0.36
POLB P06746 2/20 0.36
ALDH1A1 P00352 3/20 0.35
CYP1A2 P05177 1/20 0.35
CYP2A6 P11509 1/20 0.35
NPC1 O15118 3/20 0.35
MAPT P10636 3/20 0.35
MAPK1 P28482 2/20 0.35
LMNA P02545 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
PPARG P37231 1/20 0.35
PPARA Q07869 1/20 0.35
KDM4E B2RXH2 1/20 0.34
KIF11 P52732 1/20 0.34
CRHBP P24387 1/20 0.34
CRHR2 Q13324 1/20 0.34
HTT P42858 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703379 0.90 ESR1 (0.37) TP53RAB9ASMN1; SMN2POLBALDH1A1
SCHEMBL238216 0.88 DUT (0.38) TP53RAB9ASMN1; SMN2POLBALDH1A1
SCHEMBL3482155 0.85 TP53 (0.45) TP53RAB9ASMN1; SMN2ALDH1A1CYP1A2
SCHEMBL3482705 0.85 TP53 (0.48) TP53RAB9ASMN1; SMN2POLBALDH1A1
SCHEMBL38651049 0.85 TP53 (0.48) TP53RAB9ASMN1; SMN2ALDH1A1CYP1A2
SCHEMBL3482014 0.82 HPGD (0.39) RAB9ASMN1; SMN2POLBALDH1A1NPC1
SCHEMBL3482513 0.82 TP53 (0.50) TP53RAB9ASMN1; SMN2POLBALDH1A1
SCHEMBL9249663 0.78 DUT (0.36) TP53RAB9ASMN1; SMN2ALDH1A1NPC1
SCHEMBL8639537 0.78 L3MBTL1 (0.33) TP53RAB9ASMN1; SMN2POLBALDH1A1
SCHEMBL17770825 0.77 TP53 (0.59) TP53CXCR4RAB9ASMN1; SMN2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed