SCHEMBL3482552

SCHEMBL3482552

CO[SiH](c1ccccc1)c1ccc(C)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACHE P22303 3/20 0.43
LMNA P02545 2/20 0.43
TSHR P16473 1/20 0.43
ALOX12 P18054 1/20 0.43
HPGD P15428 2/20 0.38
TDP1 Q9NUW8 2/20 0.36
CES2 O00748 1/20 0.35
CES1 P23141 1/20 0.35
SMN1; SMN2 Q16637 3/20 0.34
ALDH1A1 P00352 1/20 0.34
RAB9A P51151 3/20 0.33
HTT P42858 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
CA4 P22748 1/20 0.33
PKM P14618 1/20 0.33
NPC1 O15118 2/20 0.32
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
CYP2C19 P33261 1/20 0.32
POLB P06746 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8155100 0.91 ACHE (0.44) ACHELMNATSHRALOX12TDP1
SCHEMBL675766 0.88 CA4 (0.41) ACHELMNATSHRALOX12SMN1; SMN2
SCHEMBL3294404 0.84 ACHE (0.46) ACHELMNATSHRALOX12HPGD
SCHEMBL27757762 0.78 LTA4H (0.56) TSHRHPGDSMN1; SMN2ALDH1A1HTT
SCHEMBL3481851 0.77 LMNA (0.39) ACHELMNATSHRALOX12HPGD
SCHEMBL19784955 0.76 LTA4H (0.58) LMNATSHRHPGDSMN1; SMN2ALDH1A1
SCHEMBL2455761 0.75 ACHE (0.53) ACHELMNATSHRALOX12HPGD
SCHEMBL7825995 0.75 ACHE (0.53) ACHELMNATSHRALOX12HPGD
SCHEMBL28753767 0.74 ACHE (0.36) ACHETSHRALDH1A1RAB9AL3MBTL1
SCHEMBL3482606 0.74 LMNA (0.36) ACHELMNATSHRALOX12HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
CN-1837221-A Production processes for triorganomonochlorosilanes HOKKO CHEM IND CO (JP) 2006-09-27 CN disclosed
CN-1612886-A Method for producing triorgano-monoalkoxysilanes and method for producing triorgano-monochlorosilanes HOKKO CHEM IND CO (JP) 2005-05-04 CN disclosed