SCHEMBL3481842

SCHEMBL3481842

CCCCc1ccccc1[SiH](OCC)OCC

nearest known ligand 0.40

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
LIPG Q9Y5X9 1/20 0.40
CYP3A4 P08684 1/20 0.37
CYP2D6 P10635 1/20 0.37
CYP2C9 P11712 1/20 0.37
ALOX5 P09917 1/20 0.36
PTGS2 P35354 1/20 0.36
TLR8 Q9NR97 2/20 0.35
THRA P10827 1/20 0.34
THRB P10828 1/20 0.34
TYR P14679 1/20 0.33
CYP4F2 P78329 1/20 0.33
CYP4A11 Q02928 1/20 0.33
NR1H2 P55055 1/20 0.33
NR1H3 Q13133 1/20 0.33
PPARA Q07869 1/20 0.32
BID P55957 1/20 0.31
BCL2L1 Q07817 1/20 0.31
MCL1 Q07820 1/20 0.31
BAK1 Q16611 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482683 0.89 ADRA2A (0.33) LIPGCYP4F2CYP4A11PPARA
SCHEMBL3482697 0.88 LIPG (0.42) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL28546603 0.86 CYP4F2 (0.32) LIPGCYP4F2CYP4A11
SCHEMBL1069351 0.86 TAAR1 (0.36) LIPGTLR8CYP4F2CYP4A11
SCHEMBL28537235 0.86 CYP4F2 (0.38) LIPGALOX5PTGS2THRATHRB
SCHEMBL7533066 0.85 MAOA (0.39) LIPGTLR8CYP4F2CYP4A11
SCHEMBL3482639 0.84 LIPG (0.41) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL28693907 0.83 LIPG (0.45) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL3339172 0.82 ATM (0.34) CYP4F2CYP4A11
SCHEMBL4267871 0.81 MAPT (0.40) CYP2D6CYP4F2CYP4A11

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
EP-0310320-B1 Curable composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 1994-12-28 EP disclosed
US-4923948-A Curable composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1990-05-08 US disclosed
EP-0310320-A2 Curable composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1989-04-05 EP disclosed