Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.34 |
| ▸ | NLRP3 | Q96P20 | 1/20 | 0.33 |
| ▸ | RAPGEF4 | Q8WZA2 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482261 | 0.83 | L3MBTL1 (0.33) | L3MBTL1NLRP3RAPGEF4SMN1; SMN2KDM4E | |
| SCHEMBL3482223 | 0.77 | PPARG (0.37) | SMN1; SMN2KDM4E | |
| SCHEMBL3482040 | 0.74 | ALDH1A1 (0.32) | — | |
| SCHEMBL3482413 | 0.73 | RAPGEF4 (0.36) | RAPGEF4KDM4E | |
| SCHEMBL2454961 | 0.69 | RAPGEF4 (0.36) | RAPGEF4KDM4E | |
| SCHEMBL2860938 | 0.67 | — | — | |
| SCHEMBL2864305 | 0.67 | — | — | |
| SCHEMBL15736385 | 0.67 | — | — | |
| SCHEMBL8384863 | 0.66 | RAPGEF4 (0.50) | RAPGEF4KDM4E | |
| SCHEMBL1726231 | 0.66 | RAPGEF4 (0.43) | RAPGEF4KDM4E |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |