Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSPA5 | P11021 | 2/20 | 0.43 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.42 |
| ▸ | MEN1 | O00255 | 1/20 | 0.42 |
| ▸ | SLC22A1 | O15245 | 1/20 | 0.42 |
| ▸ | USP2 | O75604 | 1/20 | 0.42 |
| ▸ | LMNA | P02545 | 1/20 | 0.42 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.42 |
| ▸ | MAPT | P10636 | 1/20 | 0.42 |
| ▸ | HSPD1 | P10809 | 1/20 | 0.42 |
| ▸ | IDO1 | P14902 | 1/20 | 0.42 |
| ▸ | HPGD | P15428 | 1/20 | 0.42 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.42 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.42 |
| ▸ | CASP1 | P29466 | 1/20 | 0.42 |
| ▸ | HTT | P42858 | 1/20 | 0.42 |
| ▸ | BLM | P54132 | 1/20 | 0.42 |
| ▸ | HSPE1 | P61604 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29368767 | 1.00 | HSPA5 (0.43) | HSPA5HIF1AMEN1SLC22A1USP2 | |
| SCHEMBL8430743 | 0.90 | HSPA5 (0.54) | HSPA5 | |
| SCHEMBL8430738 | 0.87 | MAPT (0.45) | MEN1MAPTKMT2A | |
| SCHEMBL7776274 | 0.84 | CYP2C9 (0.46) | HSPA5HIF1AMEN1SLC22A1USP2 | |
| SCHEMBL278272 | 0.84 | TYR (0.56) | MEN1CYP3A4MAPTALOX15HTT | |
| SCHEMBL686350 | 0.82 | AMY1A (0.69) | HSPA5HIF1ASMN1; SMN2AMY1ACYP2C9 | |
| SCHEMBL30320324 | 0.82 | AMY1A (0.69) | HSPA5HIF1ASMN1; SMN2AMY1ACYP2C9 | |
| SCHEMBL278269 | 0.81 | KEAP1 (0.55) | MEN1MAPTKMT2A | |
| SCHEMBL278522 | 0.81 | BCL2 (0.59) | HIF1AMEN1CYP3A4HPGDALOX15 | |
| SCHEMBL29450504 | 0.81 | BCL2 (0.59) | HIF1AMEN1CYP3A4HPGDALOX15 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1148 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8278021-B2 | Method of fabricating a thin film transistor substrate and a photosensitive composition used in the thin film transistor substrate | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-10-02 | — | — | US | claimed |
| US-7879528-B2 | For forming pattern that prevents contamination within the exposure apparatus; lithography | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-02-01 | — | — | US | claimed |
| EP-2203783-A2 | THICK FILM RESISTS | AZ Electronic Materials USA Corp. (US) | 2010-07-07 | — | — | EP | claimed |
| WO-2009040661-A2 | THICK FILM RESISTS | AZ ELECTRONIC MATERIALS USA CORP. (DE) | 2009-04-02 | — | — | WO | claimed |
| US-20090081589-A1 | THICK FILM RESISTS | MERCK PATENT GMBH (DE) | 2009-03-26 | — | — | US | claimed |
| US-20090030103-A1 | METHOD OF FABRICATING A THIN FILM TRANSISTOR SUBSTRATE AND A PHOTOSENSITIVE COMPOSITION USED IN THE THIN FILM TRANSISTOR SUBSTRATE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-01-29 | — | — | US | claimed |
| US-20080176170-A1 | RESIST COMPOSITION FOR ELECTRON BEAM OR EUV | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-07-24 | — | — | US | claimed |
| EP-1623274-A2 | PHOTORESIST COMPOSITIONS | AZ Electronic Materials USA Corp. (US) | 2006-02-08 | — | — | EP | claimed |
| EP-1614005-A2 | PHOTORESIST COMPOSITIONS | AZ Electronic Materials USA Corp. (US) | 2006-01-11 | — | — | EP | claimed |
| US-6905809-B2 | Photoresist compositions | CLARIANT FINANCE (BVI) LIMITED (VG) | 2005-06-14 | — | — | US | claimed |
| US-20040197696-A1 | Photoresist compositions | AZ ELECTRONIC MATERIALS USA CORP. | 2004-10-07 | — | — | US | claimed |
| US-20040197704-A1 | Photoresist compositions | AZ ELECTRONIC MATERIALS USA CORP. | 2004-10-07 | — | — | US | claimed |
| US-6790582-B1 | NOVOLAK RESIN PARTIALLY ESTERIFIED WITH NAPHTHOQUINONEDIAZIDOSULFONYL GROUP; DILUTION RESIN(S), AND SOLVENT | CLARIANT FINANCE BVI LIMITED (VG) | 2004-09-14 | — | — | US | claimed |
| US-6686120-B2 | THERMAL ACID GENERATOR AND A METHOD OF FORMING A PATTERN USING THE SAME. THE PHOTORESIST COMPOSITION INCLUDES ABOUT 100 PARTS BY WEIGHT OF AN ALKALI-SOLUBLE ACRYL COPOLYMER, ABOUT 5-100 PARTS BY WEIGHT OF 1,2-QUINONEDIAZIDE COMPOUND, ABOUT | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-02-03 | — | — | US | claimed |
| US-20030134222-A1 | Photoresist composition and method of forming pattern using the same | SAMSUNG ELECTRONICS CO., LTD. | 2003-07-17 | — | — | US | claimed |
| US-5434031-A | Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive | TOKYO OHKA KOGYO CO., LTD. (JP) | 1995-07-18 | — | — | US | claimed |
| US-5407780-A | High sensitivity, resolution and heat resistance | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1995-04-18 | — | — | US | claimed |
| US-5403696-A | Mixture of phenolic resin obtained by condensation reaction of formaldehyde with phenol mixture of meta-cresol and 2-tert-butyl-4-methylphenol or 2-tert-butyl-6-methylphenol and 1,2-quinone diazide compound | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1995-04-04 | — | — | US | claimed |
| US-5288587-A | Novolaks; improved resolution and heat resistance | SUMITOMO CHEMICAL CO., LTD. (JP) | 1994-02-22 | — | — | US | claimed |
| US-4181545-A | POT LIFE OF HYDROXY POLYBUTADIENE | UNITED TECHNOLOGIES CORPORATION (US) | 1980-01-01 | — | — | US | claimed |