Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTR6 | P50406 | 1/20 | 0.42 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.41 |
| ▸ | APOBEC3G | Q9HC16 | 1/20 | 0.40 |
| ▸ | CA2 | P00918 | 5/20 | 0.39 |
| ▸ | CA1 | P00915 | 4/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.39 |
| ▸ | CA5A | P35218 | 2/20 | 0.39 |
| ▸ | CA9 | Q16790 | 2/20 | 0.39 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.39 |
| ▸ | CA12 | O43570 | 1/20 | 0.39 |
| ▸ | CA3 | P07451 | 1/20 | 0.39 |
| ▸ | CA4 | P22748 | 1/20 | 0.39 |
| ▸ | CA6 | P23280 | 1/20 | 0.39 |
| ▸ | CA7 | P43166 | 1/20 | 0.39 |
| ▸ | PLA2G7 | Q13093 | 1/20 | 0.39 |
| ▸ | CA13 | Q8N1Q1 | 1/20 | 0.39 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.39 |
| ▸ | CA5B | Q9Y2D0 | 1/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3130157 | 0.91 | PKM (0.46) | HSD11B1ALDH1A1HSD17B10TSHR | |
| SCHEMBL503373 | 0.91 | PKM (0.46) | HSD11B1ALDH1A1HSD17B10TSHR | |
| SCHEMBL4643793 | 0.91 | CA1 (0.46) | HSD11B1CA2CA1ALDH1A1CA9 | |
| SCHEMBL962839 | 0.90 | HSD11B1 (0.41) | HTR6HSD11B1APOBEC3GCA2CA1 | |
| SCHEMBL1261245 | 0.89 | HSD11B1 (0.45) | HSD11B1CA2CA1ALDH1A1CA9 | |
| SCHEMBL444803 | 0.89 | PTGS2 (0.44) | HSD11B1 | |
| SCHEMBL147485 | 0.89 | IDO1 (0.40) | HSD11B1CA2CA1CA5ACA9 | |
| SCHEMBL36148 | 0.89 | HTT (0.45) | HSD11B1CA2CA1ALDH1A1CA5A | |
| SCHEMBL548280 | 0.89 | ESR1 (0.42) | HSD11B1CA2CA1ALDH1A1CA9 | |
| SCHEMBL3136958 | 0.89 | HTT (0.45) | HSD11B1CA2CA1ALDH1A1CA5A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 6132 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119668028-A | Negative photoresist composition, application thereof and imaging method | 福建泓光半导体材料有限公司 | 2025-03-21 | — | — | CN | claimed |
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| US-20240294771-A1 | ANTI-REFLECTIVE COATING COMPOSITION AND CROSSLINKABLE POLYMER | Tan Kah Kee Innovation Laboratory (CN) | 2024-09-05 | — | — | US | claimed |
| CN-117757070-A | Polyimide resin capable of being cured at low temperature, photoresist composition and preparation method thereof | 江苏艾森半导体材料股份有限公司 | 2024-03-26 | — | — | CN | claimed |
| CN-116102680-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-02-13 | — | — | CN | claimed |
| CN-110832397-B | Composition for forming resist underlayer film, and method for forming resist pattern | 日产化学株式会社 | 2023-12-15 | — | — | CN | claimed |
| CN-116102938-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102937-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102939-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-03 | — | — | CN | claimed |
| CN-115873176-B | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-09-26 | — | — | CN | claimed |
| US-5326675-A | Pattern forming method including the formation of an acidic coating layer on the radiation-sensitive layer | KABUSHIKI KAISHA TOSHIBA (JP) | 1994-07-05 | — | — | US | claimed |
| EP-0557501-A1 | OPTICAL RECORDING WITH NEAR-INFRARED DYES TO EFFECT BLEACHING | EASTMAN KODAK COMPANY (US) | 1993-09-01 | — | — | EP | claimed |
| US-5238781-A | PHOTOSENSITIVE COMPOSITIONS BASED ON POLYPHENOLS AND ACETALS | CIBA-GEIGY CORPORATION (US) | 1993-08-24 | — | — | US | claimed |
| US-5212047-A | Resist material and process for use | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 1993-05-18 | — | — | US | claimed |
| US-5206317-A | RESIST MATERIAL AND PROCESS FOR USE | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 1993-04-27 | — | — | US | claimed |
| WO-1993006597-A1 | OPTICAL RECORDING WITH NEAR-INFRARED DYES TO EFFECT BLEACHING | EASTMAN KODAK COMPANY (US) | 1993-04-01 | — | — | WO | claimed |
| EP-0524246-A1 | RESIST MATERIAL AND PROCESS FOR USE. | DU PONT (US) | 1993-01-27 | — | — | EP | claimed |
| WO-1991015810-A1 | RESIST MATERIAL AND PROCESS FOR USE | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 1991-10-17 | — | — | WO | claimed |
| US-4775609-A | Image reversal | HOESCHT CELANESE CORPORATION (US) | 1988-10-04 | — | — | US | claimed |
| US-4108747-A | Curable compositions and method for curing such compositions | GENERAL ELECTRIC COMPANY (US) | 1978-08-22 | — | — | US | claimed |