SCHEMBL36764

SCHEMBL36764

COc1ccc(C(C#N)=NOS(=O)(=O)c2ccccc2Cl)cc1

nearest known ligand 0.42

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
▸ KMT2A Q03164 3/20 0.42
▸ F2 P00734 2/20 0.40
▸ CTRC Q99895 1/20 0.40
▸ MAOB P27338 1/20 0.38
▸ MAPT P10636 5/20 0.38
▸ SMN1; SMN2 Q16637 3/20 0.38
▸ MEN1 O00255 2/20 0.37
▸ RAB9A P51151 2/20 0.37
▸ KDM4E B2RXH2 2/20 0.37
▸ NPC1 O15118 1/20 0.37
▸ L3MBTL1 Q9Y468 1/20 0.37
▸ NFE2L2 Q16236 1/20 0.36
▸ ALDH1A1 P00352 2/20 0.36
▸ LMNA P02545 1/20 0.36
▸ HTT P42858 1/20 0.36
▸ CES2 O00748 1/20 0.35
▸ CES1 P23141 1/20 0.35
▸ NQO2 P16083 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29359430 1.00 KMT2A (0.42) KMT2AF2CTRCMAOBMAPT
SCHEMBL36763 1.00 KMT2A (0.42) KMT2AF2CTRCMAOBMAPT
SCHEMBL6809982 0.87 POLB (0.38) KMT2AMAPTSMN1; SMN2MEN1RAB9A
SCHEMBL4350596 0.84 NPC1 (0.42) KMT2AF2MAOBMAPTMEN1
SCHEMBL30529837 0.84 NPC1 (0.42) KMT2AF2MAOBMAPTMEN1
SCHEMBL4350592 0.84 NPC1 (0.42) KMT2AF2MAOBMAPTMEN1
SCHEMBL36510 0.83 HSD11B1 (0.46) KMT2AMAPTSMN1; SMN2RAB9AKDM4E
SCHEMBL36511 0.83 HSD11B1 (0.46) KMT2AMAPTSMN1; SMN2RAB9AKDM4E
SCHEMBL5918261 0.81 EP300 (0.45) F2MAPTKDM4EALDH1A1NQO2
SCHEMBL5918260 0.81 EP300 (0.45) F2MAPTKDM4EALDH1A1NQO2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 890 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117590696-A Photosensitive resin composition 东京应化工业株式会社 2024-02-23 — — CN disclosed
US-20240053680-A1 PHOTOSENSITIVE DRY FILM, LAMINATED FILM, METHOD FOR PRODUCING LAMINATED FILM, AND METHOD FOR PRODUCING PATTERNED RESIST FILM TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-15 — — US disclosed
CN-110647010-B Resin composition, dry film, method for producing dry film, resist film, substrate, and method for producing plating molded article 东京应化工业株式会社 2024-02-09 — — CN disclosed
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 — — US disclosed
CN-107615168-B Radiation-sensitive composition 日产化学工业株式会社 2023-12-19 — — CN disclosed
CN-109709770-B Resin composition, dry film and method for producing same, method for producing resist film and substrate, method for producing plated molded article, and mercapto compound 东京应化工业株式会社 2023-11-24 — — CN disclosed
CN-117008420-A Radiation-sensitive composition 日产化学工业株式会社 2023-11-07 — — CN disclosed
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 — — US disclosed
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 — — US disclosed
US-20230273521-A1 CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-31 — — US disclosed
US-5902713-A Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-05-11 — — US disclosed
US-5892095-A Cyano group-containing oxime sulfonate compounds TOKYO OHKA KOGYO CO., LTD. (JP) 1999-04-06 — — US disclosed
US-5800964-A Photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-09-01 — — US disclosed
US-5714625-A Cyanooxime sulfonate compound TOKYO OHKA KOGYO CO., LTD. (JP) 1998-02-03 — — US disclosed
EP-0821274-A1 Chemical-sensitization resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-01-28 — — EP disclosed
EP-0780729-A1 Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1997-06-25 — — EP disclosed
EP-0768572-A1 Photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1997-04-16 — — EP disclosed
EP-0139609-B1 PROCESS FOR CURING ACID-CURABLE LACQUERS CIBA-GEIGY AG (CH) 1987-02-04 — — EP disclosed
US-4540598-A LATENT OXIME SULFONATE CATALYSTS CIBA-GEIGY CORPORATION (US) 1985-09-10 — — US disclosed
EP-0139609-A1 Process for curing acid-curable lacquers CIBA-GEIGY AG (CH) 1985-05-02 — — EP disclosed
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