Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 2/20 | 0.52 |
| ▸ | F2 | P00734 | 3/20 | 0.47 |
| ▸ | PRSS1 | P07477 | 3/20 | 0.47 |
| ▸ | PRSS2 | P07478 | 3/20 | 0.47 |
| ▸ | PRSS3 | P35030 | 3/20 | 0.47 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.47 |
| ▸ | MCOLN3 | Q8TDD5 | 2/20 | 0.42 |
| ▸ | TSHR | P16473 | 1/20 | 0.42 |
| ▸ | CA2 | P00918 | 2/20 | 0.42 |
| ▸ | CA1 | P00915 | 1/20 | 0.42 |
| ▸ | CA9 | Q16790 | 1/20 | 0.42 |
| ▸ | NPC1 | O15118 | 1/20 | 0.42 |
| ▸ | RAB9A | P51151 | 1/20 | 0.42 |
| ▸ | MEN1 | O00255 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | KAT6A | Q92794 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.41 |
| ▸ | GAA | P10253 | 1/20 | 0.41 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29515977 | 1.00 | LMNA (0.52) | LMNAF2PRSS1PRSS2PRSS3 | |
| SCHEMBL29015881 | 0.91 | KAT6A (0.48) | LMNAF2PRSS1PRSS2PRSS3 | |
| SCHEMBL2460253 | 0.84 | RAPGEF3 (0.48) | LMNAL3MBTL1MEN1KMT2AKAT6A | |
| SCHEMBL29515643 | 0.77 | KAT6A (0.48) | LMNAF2PRSS1PRSS2PRSS3 | |
| SCHEMBL382665 | 0.77 | KAT6A (0.48) | LMNAF2PRSS1PRSS2PRSS3 | |
| SCHEMBL65095 | 0.77 | SMN1; SMN2 (0.46) | LMNAL3MBTL1MCOLN3TSHRCA2 | |
| SCHEMBL5881706 | 0.76 | KAT6A (0.44) | LMNAL3MBTL1TSHRCA2CA1 | |
| SCHEMBL14844698 | 0.76 | LMNA (0.57) | LMNAF2PRSS1PRSS2PRSS3 | |
| SCHEMBL5881834 | 0.75 | CA2 (0.44) | LMNATSHRCA2CA1CA9 | |
| SCHEMBL5881831 | 0.75 | CA12 (0.47) | L3MBTL1TSHRCA2CA1CA9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 425 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | claimed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | claimed |
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | disclosed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | disclosed |
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | disclosed |
| CN-114600045-B | Photosensitive resin composition, photosensitive dry film and pattern forming method | 信越化学工业株式会社 | 2025-05-09 | — | — | CN | disclosed |
| EP-4050054-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHINETSU CHEMICAL CO (JP) | 2025-04-23 | — | — | EP | disclosed |
| CN-119827495-A | Method for testing alkali purity, alkali strength and alkali residue by using photoetching machine | 上海微悦芯材新材料有限责任公司 | 2025-04-15 | — | — | CN | disclosed |
| CN-119827496-A | Method for testing acid strength and acid production efficiency by using photoetching machine and application | 上海微悦芯材新材料有限责任公司 | 2025-04-15 | — | — | CN | disclosed |
| EP-1117003-A1 | Chemical amplification type resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2001-07-18 | — | — | EP | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
| EP-0417557-B1 | Positive-working radiation-sensitive mixture and recording material prepared therefrom | HOECHST AG (DE) | 1996-12-11 | — | — | EP | disclosed |
| EP-0444493-B1 | Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom | HOECHST AG (DE) | 1996-11-20 | — | — | EP | disclosed |
| US-5424166-A | Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1995-06-13 | — | — | US | disclosed |
| US-5338641-A | Positive-working radiation-sensitive mixture and copying material produced therefrom comprising an α,α-bis(sulfonyl) diazo methane as an acid forming compound | HOECHST AKTIENGESELLSCHAFT (DE) | 1994-08-16 | — | — | US | disclosed |
| EP-0444493-A2 | Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1991-09-04 | — | — | EP | disclosed |
| EP-0417557-A2 | Positive-working radiation-sensitive mixture and recording material prepared therefrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1991-03-20 | — | — | EP | disclosed |