Benzoin

Benzoin

SCHEMBL384248

CS(=O)(=O)O.O=C(c1ccccc1)C(O)c1ccccc1

nearest known ligand 0.78

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ABL1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB2AGTR1BCL2BCL2A1BCL2L1BCL2L10BCL2L2BCRBRAFCHRM1CHRNA10CHRNA9DRD1DRD2DRD3DRD4DRD5EGFRF2FLT1FLT4GCKGHSRGNRHRGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHTR1AHTR1BHTR1DHTR2AHTR2CHTR3AIDH2KDRKITMAOBMCL1MTTPPP4HBPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PIKFYVEROCK1ROCK2SLC18A2SLC6A2SLC6A3SLC6A4TACR1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8gyrAgyrBparCparEpol

The experimentally established mechanism targets of Benzoin. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
LMNA P02545 4/20 0.78
CES2 O00748 3/20 0.78
CES1 P23141 3/20 0.78
ALDH1A1 P00352 5/20 0.60
KDM4E B2RXH2 2/20 0.60
TDP1 Q9NUW8 2/20 0.52
L3MBTL1 Q9Y468 1/20 0.52
HPGD P15428 2/20 0.50
CYP3A4 P08684 1/20 0.50
MAPK1 P28482 1/20 0.50
GMNN O75496 1/20 0.50
POLB P06746 1/20 0.50
MAPT P10636 1/20 0.50
PMP22 Q01453 1/20 0.50
KMT2A Q03164 1/20 0.50
NPSR1 Q6W5P4 1/20 0.50
SRC P12931 1/20 0.48
GAA P10253 1/20 0.44
NAAA Q02083 2/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Benzoin SCHEMBL28391545 0.92 LMNA (0.84) LMNACES2CES1ALDH1A1KDM4E
Benzoin SCHEMBL6529357 0.89 LMNA (0.84) LMNACES2CES1ALDH1A1KDM4E
Benzoin SCHEMBL4557692 0.88 LMNA (0.91) LMNACES2CES1ALDH1A1KDM4E
Benzoin SCHEMBL10665271 0.88 CES2 (1.00) LMNACES2CES1ALDH1A1KDM4E
Benzoin SCHEMBL901258 0.88 CES2 (1.00) LMNACES2CES1ALDH1A1KDM4E
Benzoin SCHEMBL5833429 0.88 CES2 (1.00) LMNACES2CES1ALDH1A1KDM4E
Benzoin SCHEMBL28120851 0.88 CES2 (1.00) LMNACES2CES1ALDH1A1KDM4E
Benzoin SCHEMBL145 0.88 CES2 (1.00) LMNACES2CES1ALDH1A1KDM4E
Benzoin SCHEMBL2025536 0.88 CES2 (1.00) LMNACES2CES1ALDH1A1KDM4E
Benzoin SCHEMBL27696284 0.88 CES2 (1.00) LMNACES2CES1ALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 430 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0251465-A2 Light activatable anaerobic composition containing latent sulfonic acid source LOCTITE CORPORATION (US) 1988-01-07 EP claimed
CN-122072436-A Negative photosensitive resin composition, cured film, and resist film DIC株式会社 2026-05-22 CN disclosed
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
CN-114600045-B Photosensitive resin composition, photosensitive dry film and pattern forming method 信越化学工业株式会社 2025-05-09 CN disclosed
EP-4050054-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHINETSU CHEMICAL CO (JP) 2025-04-23 EP disclosed
WO-2025058368-A1 PHOTOSENSITIVE RESIN COMPOSITION, INSULATION FILM, AND SEMICONDUCTOR DEVICE 주식회사 엘지화학 2025-03-20 WO disclosed
CN-119575759-A Positive photosensitive resin composition, photosensitive film, resist underlayer film, resist permanent film, and method for producing film DIC株式会社 2025-03-07 CN disclosed
US-12197127-B2 Negative photosensitive resin composition, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-01-14 US disclosed
CN-111338181-B Photosensitive resin composition, photosensitive dry film and pattern forming method 信越化学工业株式会社 2024-11-26 CN disclosed
CN-113348188-B Phenolic hydroxyl group-containing resin, photosensitive composition, resist film, curable composition, and cured product DIC株式会社 2024-05-10 CN disclosed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP disclosed
US-5716756-A POSITIVE OR NEGATIVE WORKING MIXTURES HOECHST AKTIENGESELLSCHAFT (DE) 1998-02-10 US disclosed
US-5449705-A Silicon-containing polyamic acid derivative and photosensitive resin composition using it CHISSO CORPORATION (JP) 1995-09-12 US disclosed
US-5442024-A Polyamic acid having a crosslinkable silane group or copolymerized with a polysiloxane and a compound generating an acid catalyst to effect imidation upon radiating; films; photoresists; shrinkage inhibition; resolution; adhesion CHISSO CORPORATION (JP) 1995-08-15 US disclosed
US-4837350-A Process for the preparation of benzoin sulfonates CIBA-GEIGY CORPORATION (US) 1989-06-06 US disclosed
EP-0251465-A2 Light activatable anaerobic composition containing latent sulfonic acid source LOCTITE CORPORATION (US) 1988-01-07 EP disclosed
EP-0249365-A2 Photocatalysts for vinyl compounds activated by an electron donating hetero atom LOCTITE (IRELAND) Ltd. (IE) 1987-12-16 EP disclosed
US-4708926-A SULFONIC ESTERS OF A-HYDROXYCARBONYL COMPOUNDS CIBA-GEIGY CORPORATION (US) 1987-11-24 US disclosed
US-4636575-A Masked curing catalyst for acid-curable compositions CIBA-GEIGY CORPORATION (US) 1987-01-13 US disclosed
US-4510290-A LATENCY; LOW-TEMPERATURE CURING BY SHORTWAVE RADIATION; INKS, LACQUERS CIBA GEIGY CORPORATION (US) 1985-04-09 US disclosed