SCHEMBL384856

SCHEMBL384856

CC(C)(C)Oc1ccc([S+](c2ccccc2)c2ccccc2)cc1.CC12CCC(C(S(=O)(=O)[O-])C1=O)C2(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6345266 1.00
SCHEMBL6339986 0.96 CNR2 (0.31)
SCHEMBL217323 0.88 ALDH1A1 (0.32)
SCHEMBL6342395 0.87
SCHEMBL384343 0.87 ALDH1A1 (0.34)
SCHEMBL4480664 0.85 NR1I2 (0.32)
SCHEMBL447468 0.84 PTGS2 (0.33)
SCHEMBL4852337 0.84
SCHEMBL219862 0.82 HSD11B1 (0.36)
SCHEMBL220080 0.82 HSD11B1 (0.36)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 200 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
CN-107615168-B Radiation-sensitive composition 日产化学工业株式会社 2023-12-19 CN disclosed
CN-117008420-A Radiation-sensitive composition 日产化学工业株式会社 2023-11-07 CN disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-11561472-B2 Radiation sensitive composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-01-24 US disclosed
EP-3309614-B1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL CORP (JP) 2021-11-10 EP disclosed
US-20190185707-A1 ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2019-06-20 US disclosed
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-06-28 US disclosed
EP-3309614-A1 RADIATION SENSITIVE COMPOSITION Nissan Chemical Industries, Ltd. (JP) 2018-04-18 EP disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
US-20040033432-A1 Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-19 US disclosed
US-20040033440-A1 Photoacid generators, chemically amplified positive resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-19 US disclosed
US-6689530-B2 ULTRAVIOLET LITHOGRAPHY MICROFABRICATION WITH IMPROVED RESOLUTION AND PATTERN PROFILE AFTER DEVELOPMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-10 US disclosed
US-20030224298-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-04 US disclosed
US-20030215738-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-20 US disclosed
US-20030180653-A1 Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-25 US disclosed
US-6593056-B2 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-07-15 US disclosed
US-20020042017-A1 Chemically amplified positive resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-11 US disclosed
US-20010035394-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-01 US disclosed
EP-1136885-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-26 EP disclosed