SCHEMBL447468

SCHEMBL447468

CC12CCC(C(S(=O)(=O)[O-])C1=O)C2(C)C.CS(=O)(=O)c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.33

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
PTGS2 P35354 14/20 0.33
PTGS1 P23219 7/20 0.33
CNR2 P34972 1/20 0.31
NR3C1 P04150 1/20 0.31
OPRM1 P35372 2/20 0.31
OPRL1 P41146 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL217323 0.93 ALDH1A1 (0.32) CNR2
SCHEMBL4480664 0.90 NR1I2 (0.32)
SCHEMBL384343 0.87 ALDH1A1 (0.34) CNR2NR3C1
SCHEMBL449277 0.85 KMT2A (0.32)
SCHEMBL6339049 0.85 HSD11B1 (0.30)
SCHEMBL384824 0.85 NR1I2 (0.34)
SCHEMBL6345266 0.84
SCHEMBL384856 0.84
SCHEMBL483101 0.84 ALDH1A1 (0.30)
SCHEMBL219862 0.82 HSD11B1 (0.36) CNR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 99 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2022091731-A1 METAL COMPLEX, COMPOSITION, RESIST MATERIAL, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE DIC株式会社 2022-05-05 WO disclosed
WO-2022049911-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2022-03-10 WO disclosed
US-11204552-B2 Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent JSR CORPORATION (JP) 2021-12-21 US disclosed
EP-3229075-B1 PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN JSR CORP (JP) 2021-01-06 EP disclosed
US-10725376-B2 Pattern-forming method JSR CORPORATION (JP) 2020-07-28 US disclosed
US-20200041902-A9 RADIATION-SENSITIVE COMPOSITION, PATTERN-FORMING METHOD AND RADIATION-SENSITIVE ACID GENERATING AGENT JSR CORPORATION (JP) 2020-02-06 US disclosed
US-20190155162-A1 PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT JSR CORPORATION (JP) 2019-05-23 US disclosed
US-20190033713-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2019-01-31 US disclosed
US-10108088-B2 Radiation-sensitive composition and pattern-forming method JSR CORPORATION (JP) 2018-10-23 US disclosed
US-10088750-B2 Acid diffusion control agent, radiation-sensitive resin composition, resist pattern-forming method, compound, and production method JSR CORPORATION (JP) 2018-10-02 US disclosed
US-20120219903-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-08-30 US disclosed
US-8252511-B2 Method for modifying first film and composition for forming acid transfer resin film used therefor JSR CORPORATION (JP) 2012-08-28 US disclosed
US-20120183908-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2012-07-19 US disclosed
EP-2444845-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2012-04-25 EP disclosed
US-20120082936-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2012-03-15 US disclosed
US-20110076619-A1 METHOD FOR MODIFYING FIRST FILM AND COMPOSITION FOR FORMING ACID TRANSFER RESIN FILM USED THEREFOR JSR CORPORATION (JP) 2011-03-31 US disclosed
US-20110027718-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2011-02-03 US disclosed
US-20100190109-A1 ACID TRANSFER COMPOSITION, ACID TRANSFER FILM, AND PATTERN FORMING METHOD JSR CORPORATION (JP) 2010-07-29 US disclosed
US-20070042292-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-02-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11204552-B2 Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent NOS1, ADCY1, IFNAR1 PTGS2 2039/4885PTGS1 420/4885CNR2 2399/4885
US-20110027718-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND SMARCC1, RXRA, RXRB PTGS2 4163/4885PTGS1 3250/4885CNR2 1982/4885
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND RAD51, RER1, XRCC5 PTGS2 2958/4885PTGS1 1932/4885CNR2 4585/4885
US-10088750-B2 Acid diffusion control agent, radiation-sensitive resin composition, resist pattern-forming method, compound, and production method RER1, RFC4, RFC2 PTGS2 3915/4885PTGS1 4097/4885CNR2 3006/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.