SCHEMBL3873471

SCHEMBL3873471

O=C1OC2CC1CCC2OC(=O)C1CC2C=CC1C2

nearest known ligand 0.36

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.36
LMNA P02545 1/20 0.36
POLB P06746 2/20 0.35
APEX1 P27695 1/20 0.35
RECQL P46063 1/20 0.35
BLM P54132 1/20 0.35
ESR2 Q92731 1/20 0.35
HSD17B10 Q99714 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
ALDH1A1 P00352 5/20 0.34
KMT2A Q03164 2/20 0.34
RAB9A P51151 1/20 0.34
HPGD P15428 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3873453 0.76 ALDH1A1 (0.37) KDM4ELMNAPOLBAPEX1RECQL
SCHEMBL14178392 0.74 KDM4E (0.35) KDM4ELMNAPOLBAPEX1RECQL
SCHEMBL13382568 0.73 LMNA (0.50) KDM4ELMNAPOLBAPEX1RECQL
SCHEMBL10061832 0.72 CHRM2 (0.37) KMT2A
SCHEMBL12514940 0.72 LMNA (0.42) KDM4ELMNAPOLBAPEX1RECQL
SCHEMBL120085 0.71 ALDH1A1 (0.41) KDM4ELMNAPOLBAPEX1RECQL
SCHEMBL13409254 0.71 ALDH1A1 (0.41) KDM4ELMNAPOLBAPEX1RECQL
SCHEMBL9909405 0.71 MIF (0.38) ESR2HSD17B10ALDH1A1KMT2A
SCHEMBL19062654 0.70 GPX4 (0.35) KDM4EPOLBRECQLTDP1ALDH1A1
SCHEMBL75422 0.70 GPX4 (0.35) KDM4EPOLBRECQLTDP1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220004101-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-06 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20110129777-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-02 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed