Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES1 | P23141 | 4/20 | 0.33 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.32 |
| ▸ | FDPS | P14324 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3874718 | 0.83 | CES2 (0.46) | CES1EPHX1 | |
| SCHEMBL3879954 | 0.80 | ALDH1A1 (0.35) | CES1EPHX1ALDH1A1L3MBTL1 | |
| SCHEMBL3871127 | 0.75 | LPAR1 (0.35) | CES1EPHX1ALDH1A1L3MBTL1FDPS | |
| SCHEMBL21136014 | 0.74 | CES1 (0.32) | CES1EPHX1ALDH1A1L3MBTL1 | |
| SCHEMBL6906998 | 0.73 | FDPS (0.36) | CES1EPHX1ALDH1A1L3MBTL1FDPS | |
| Sulfuric Acid SCHEMBL5488887 | 0.73 | CES1 (0.34) | CES1EPHX1FDPS | |
| Ammonia Solution, Strong SCHEMBL18008280 | 0.73 | LPAR1 (0.34) | CES1EPHX1ALDH1A1L3MBTL1FDPS | |
| SCHEMBL15702986 | 0.71 | EPHX1 (0.32) | EPHX1ALDH1A1L3MBTL1FDPS | |
| Sulfuric Acid SCHEMBL5490610 | 0.71 | CES1 (0.33) | CES1EPHX1FDPS | |
| Trifluoromethanesulfonic Acid SCHEMBL3361058 | 0.71 | EPHX1 (0.43) | CES1EPHX1ALDH1A1L3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7638261-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2009-12-29 | — | — | US | disclosed |
| US-20090148790-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-7521169-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2009-04-21 | — | — | US | disclosed |
| US-20080187859-A1 | Radiation-Sensitive Resin Composition | JSR CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-7297461-B2 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2007-11-20 | — | — | US | disclosed |
| US-7288359-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-10-30 | — | — | US | disclosed |
| EP-1736829-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2006-12-27 | — | — | EP | disclosed |
| US-20060234153-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| US-7108955-B2 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-09-19 | — | — | US | disclosed |
| US-20050171226-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2005-08-04 | — | — | US | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-20040143082-A1 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-07-22 | — | — | US | disclosed |
| EP-1398339-A1 | POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2004-03-17 | — | — | EP | disclosed |
| US-20030219680-A1 | Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams | JSR CORPORATION (JP) | 2003-11-27 | — | — | US | disclosed |
| US-20030170561-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-09-11 | — | — | US | disclosed |