SCHEMBL3876865

SCHEMBL3876865

O=C1C(c2ccccc2)=C(c2ccccc2)C(=O)N1O

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTGS2 P35354 2/20 0.44
IDH1 O75874 1/20 0.43
CCNT1 O60563 1/20 0.43
CDK9 P50750 1/20 0.43
P2RX7 Q99572 1/20 0.42
PDE4B Q07343 1/20 0.41
NR1H2 P55055 1/20 0.41
NR1H3 Q13133 1/20 0.41
GLO1 Q04760 2/20 0.41
FGFR1 P11362 2/20 0.41
FGFR2 P21802 2/20 0.41
FGFR4 P22455 2/20 0.41
FGFR3 P22607 2/20 0.41
ERCC1 P07992 2/20 0.40
FEN1 P39748 2/20 0.40
ERCC4 Q92889 2/20 0.40
LMNA P02545 1/20 0.40
MAPT P10636 1/20 0.40
HTT P42858 1/20 0.40
KMT2A Q03164 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28258765 0.87 P2RX7 (0.46) PTGS2IDH1CCNT1CDK9P2RX7
SCHEMBL21385841 0.81 IDH1 (0.41) PTGS2IDH1CCNT1CDK9P2RX7
SCHEMBL31098415 0.78 MAPT (0.50) IDH1PDE4BGLO1ERCC1FEN1
SCHEMBL31098416 0.78 MAPT (0.50) IDH1PDE4BGLO1ERCC1FEN1
SCHEMBL3677501 0.78 MAPT (0.50) IDH1PDE4BGLO1ERCC1FEN1
SCHEMBL794276 0.75 PTGS2 (0.69) PTGS2PDE4BNR1H2NR1H3MAPT
SCHEMBL29248774 0.75 PTGS2 (0.48) PTGS2P2RX7PDE4BNR1H2NR1H3
SCHEMBL19577286 0.75 PTGS2 (0.44) PTGS2P2RX7PDE4BNR1H2NR1H3
SCHEMBL6310937 0.73 LCK (0.57) PTGS2PDE4BNR1H2NR1H3LMNA
SCHEMBL29644690 0.73 PTGS2 (0.67) PTGS2IDH1PDE4BNR1H2NR1H3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
US-7638261-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-12-29 US disclosed
US-20090148790-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-06-11 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
EP-0898201-B1 Radiation sensitive resin composition JSR CORP (JP) 2003-04-09 EP disclosed
US-6136500-A CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION JSR CORPORATION (JP) 2000-10-24 US disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed