Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL55434 | 0.95 | — | — | |
| SCHEMBL27388115 | 0.90 | — | — | |
| Bromide SCHEMBL27858250 | 0.90 | — | — | |
| Hydrochloric Acid SCHEMBL30849864 | 0.90 | CYP2D6 (0.33) | — | |
| Fluoride SCHEMBL27797350 | 0.90 | — | — | |
| Hydrochloric Acid SCHEMBL4266235 | 0.90 | — | — | |
| Hydrochloric Acid SCHEMBL28903650 | 0.90 | — | — | |
| Hydrochloric Acid SCHEMBL28536498 | 0.86 | — | — | |
| Chloromethane SCHEMBL27474602 | 0.86 | — | — | |
| Boric Acid SCHEMBL8614621 | 0.82 | LMNA (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118339245-A | Polishing slurry composition | 凯斯科技股份有限公司 | 2024-07-12 | — | — | CN | claimed |
| WO-2023121037-A1 | POLISHING SLURRY COMPOSITION | 주식회사 케이씨텍 | 2023-06-29 | — | — | WO | claimed |
| CN-110506100-A | Composite and application method after chemical mechanical grinding | ENTEGRIS INC | 2019-11-26 | — | — | CN | claimed |
| CN-106661518-A | Cleaning composition following CMP and methods related thereto | 嘉柏微电子材料股份公司 | 2017-05-10 | — | — | CN | claimed |
| US-12599937-B2 | Water-based, high-efficiency chemical reagent for substrate surface particle removal | APPLIED MATERIALS, INC. (US) | 2026-04-14 | — | — | US | disclosed |
| US-20250235900-A1 | WATER-BASED, HIGH-EFFICIENCY CHEMICAL REAGENT FOR SUBSTRATE SURFACE PARTICLE REMOVAL | APPLIED MATERIALS, INC. | 2025-07-24 | — | — | US | disclosed |
| CN-118339245-A | Polishing slurry composition | 凯斯科技股份有限公司 | 2024-07-12 | — | — | CN | disclosed |
| WO-2023121037-A1 | POLISHING SLURRY COMPOSITION | 주식회사 케이씨텍 | 2023-06-29 | — | — | WO | disclosed |
| CN-110506100-A | Composite and application method after chemical mechanical grinding | ENTEGRIS INC | 2019-11-26 | — | — | CN | disclosed |
| CN-101888906-B | Cleaning agent and cleaning method for electronic material | SANYO CHEMICAL IND LTD | 2012-12-19 | — | — | CN | disclosed |
| US-8173584-B2 | Composition and method for treating semiconductor substrate surface | LASERWORT LTD (HK) | 2012-05-08 | — | — | US | disclosed |
| US-20120083436-A1 | COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE | LASERWORT LTD (HK) | 2012-04-05 | — | — | US | disclosed |
| US-8101561-B2 | Composition and method for treating semiconductor substrate surface | LASERWORT LTD (HK) | 2012-01-24 | — | — | US | disclosed |
| US-20110118165-A1 | COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE | Lee, Wai Mun (US) | 2011-05-19 | — | — | US | disclosed |
| CN-101888906-A | Cleaning agent and cleaning method for electronic material | SANYO CHEMICAL IND LTD | 2010-11-17 | — | — | CN | disclosed |
| US-4626497-A | PHOTOPOLYMERIZABLE ADDITION POLYMER WITH PENDANT MALEIMIDE GROUPS | CIBA-GEIGY AG (CH) | 1986-12-02 | — | — | US | disclosed |