Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TP53 | P04637 | 1/20 | 0.50 |
| ▸ | CALM1 | P0DP23 | 1/20 | 0.41 |
| ▸ | TSHR | P16473 | 5/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.39 |
| ▸ | IDO1 | P14902 | 1/20 | 0.38 |
| ▸ | LOXL2 | Q9Y4K0 | 1/20 | 0.38 |
| ▸ | TRPA1 | O75762 | 1/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.37 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | MAOB | P27338 | 1/20 | 0.36 |
| ▸ | HPGD | P15428 | 1/20 | 0.36 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.36 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.36 |
| ▸ | CASP1 | P29466 | 1/20 | 0.36 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.36 |
| ▸ | TAAR1 | Q96RJ0 | 3/20 | 0.36 |
| ▸ | MAOA | P21397 | 1/20 | 0.36 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL967040 | 0.97 | TP53 (0.48) | TP53CALM1TSHRALDH1A1IDO1 | |
| Bromide SCHEMBL29399740 | 0.97 | TP53 (0.48) | TP53CALM1TSHRALDH1A1IDO1 | |
| SCHEMBL8973723 | 0.95 | TP53 (0.50) | TP53CALM1TSHRALDH1A1IDO1 | |
| SCHEMBL767035 | 0.87 | TP53 (0.39) | TP53TSHRALDH1A1TRPA1 | |
| SCHEMBL247179 | 0.83 | CALM1 (0.50) | TP53CALM1TSHRALDH1A1IDO1 | |
| Bromide SCHEMBL10885367 | 0.80 | CALM1 (0.47) | TP53CALM1TSHRALDH1A1IDO1 | |
| Iodide SCHEMBL10884305 | 0.80 | CALM1 (0.47) | TP53CALM1TSHRALDH1A1IDO1 | |
| SCHEMBL4235702 | 0.80 | TP53 (0.46) | TP53CALM1TSHRALDH1A1IDO1 | |
| SCHEMBL9843203 | 0.80 | TP53 (0.37) | TP53CALM1 | |
| SCHEMBL4235680 | 0.77 | TP53 (0.48) | TP53CALM1TSHRALDH1A1IDO1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 124 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8173584-B2 | Composition and method for treating semiconductor substrate surface | LASERWORT LTD (HK) | 2012-05-08 | — | — | US | claimed |
| US-20120083436-A1 | COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE | LASERWORT LTD (HK) | 2012-04-05 | — | — | US | claimed |
| US-8101561-B2 | Composition and method for treating semiconductor substrate surface | LASERWORT LTD (HK) | 2012-01-24 | — | — | US | claimed |
| US-20110118165-A1 | COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE | Lee, Wai Mun (US) | 2011-05-19 | — | — | US | claimed |
| US-20260118764-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2026-04-30 | — | — | US | disclosed |
| EP-4715465-A1 | MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER | Nissan Chemical Corporation (JP) | 2026-03-25 | — | — | EP | disclosed |
| US-12585188-B2 | Composition for forming resist underlying film | NISSAN CHEMICAL CORPORATION (JP) | 2026-03-24 | — | — | US | disclosed |
| EP-4679175-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | Nissan Chemical Corporation (JP) | 2026-01-14 | — | — | EP | disclosed |
| EP-4673515-A1 | SILICON-BASED LIQUID CRYSTAL ALIGNMENT AGENT FOR SMART WINDOWS | Saint-Gobain Glass France (FR) | 2026-01-07 | — | — | EP | disclosed |
| US-20250377596-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2025-12-11 | — | — | US | disclosed |
| US-12493243-B2 | Film-forming composition | NISSAN CHEMICAL CORPORATION (JP) | 2025-12-09 | — | — | US | disclosed |
| US-20250362609-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID | NISSAN CHEMICAL CORPORATION (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20120083436-A1 | COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE | LASERWORT LTD (HK) | 2012-04-05 | — | — | US | disclosed |
| US-20120070994-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2012-03-22 | — | — | US | disclosed |
| US-8101561-B2 | Composition and method for treating semiconductor substrate surface | LASERWORT LTD (HK) | 2012-01-24 | — | — | US | disclosed |
| US-8101561-B2 | Composition and method for treating semiconductor substrate surface | LASERWORT LTD (HK) | 2012-01-24 | — | — | US | disclosed |
| US-20110118165-A1 | COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE | Lee, Wai Mun (US) | 2011-05-19 | — | — | US | disclosed |
| US-20110118165-A1 | COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE | Lee, Wai Mun (US) | 2011-05-19 | — | — | US | disclosed |
| WO-2009040107-A2 | METHOD FOR THE PRODUCTION OF METAL-CONTAINING NANOPARTICLES | ALBERT-LUDWIGS-UNIVERSITÄT FREIBURG (DE) | 2009-04-02 | — | — | WO | disclosed |
| US-3966720-A | Process for producing desacetoxy cephalosporanic acid compound | NIKKEN CHEMICALS CO., LTD. (JA) | 1976-06-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260118764-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM | SRSF1, MACF1, SRPK1 | TP53 2101/4885CALM1 4620/4885TSHR 4084/4885 |
| US-20120070994-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND | SMC3, SRSF3, SRSF9 | TP53 2177/4885CALM1 3261/4885TSHR 2660/4885 |
| US-12585188-B2 | Composition for forming resist underlying film | SRR, SMC1A, ASH2L | TP53 4706/4885CALM1 3936/4885TSHR 3614/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.