Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Tetramethylammonium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CHRNB2 | P17787 | 1/20 | 0.44 |
| ▸ | CHRNA7 | P36544 | 1/20 | 0.44 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetramethylammonium Ion SCHEMBL136727 | 0.94 | CHRNB2 (0.50) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL2494399 | 0.78 | CHRNB2 (0.44) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL2003451 | 0.78 | CHRNB2 (0.44) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL9114012 | 0.74 | CHRNB2 (0.80) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL15477 | 0.74 | — | — | |
| Tetramethylammonium Ion SCHEMBL4108131 | 0.74 | CHRNB2 (0.80) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL136726 | 0.74 | CHRNB2 (0.40) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL4007649 | 0.70 | CHRNB2 (0.36) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL8185035 | 0.68 | CHRNB2 (0.67) | CHRNB2CHRNA7CHRNA4 | |
| Tetramethylammonium Ion SCHEMBL7166906 | 0.68 | CHRNB2 (0.67) | CHRNB2CHRNA7CHRNA4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116694221-A | Carbon dioxide laser carving low-temperature explosion-proof paint and preparation method thereof | 千浪化研新材料(上海)有限公司 | 2023-09-05 | — | — | CN | claimed |
| CN-101233456-A | Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal compositions | ADVANCED TECH MATERIALS (US) | 2008-07-30 | — | — | CN | claimed |
| EP-1891482-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2008-02-27 | — | — | EP | claimed |
| WO-2006133253-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-12-14 | — | — | WO | claimed |
| CN-116694221-B | Carbon dioxide laser carving low-temperature explosion-proof paint and preparation method thereof | 千浪化研新材料(上海)有限公司 | 2024-04-12 | — | — | CN | disclosed |
| CN-116694221-A | Carbon dioxide laser carving low-temperature explosion-proof paint and preparation method thereof | 千浪化研新材料(上海)有限公司 | 2023-09-05 | — | — | CN | disclosed |
| US-9422513-B2 | Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2016-08-23 | — | — | US | disclosed |
| US-20150094248-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | TRUIST BANK, AS NOTES COLLATERAL AGENT | 2015-04-02 | — | — | US | disclosed |
| US-8951948-B2 | Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2015-02-10 | — | — | US | disclosed |
| CN-102981377-B | Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition | ADVANCED TECH MATERIALS | 2014-11-12 | — | — | CN | disclosed |
| CN-102981377-A | Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition | ADVANCED TECH MATERIALS | 2013-03-20 | — | — | CN | disclosed |
| CN-101233456-B | Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal compositions | ADVANCED TECH MATERIALS | 2013-01-02 | — | — | CN | disclosed |
| US-20080242574-A1 | Stripping post etching residue from microelectronic devices without affecting underlying silicate materials and interconnect metals; fluoride containing compound in organic solvent | ADVANCED TECHNOLOGY MATERIALS, INC (US) | 2008-10-02 | — | — | US | disclosed |
| CN-101233456-A | Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal compositions | ADVANCED TECH MATERIALS (US) | 2008-07-30 | — | — | CN | disclosed |
| US-20080156908-A1 | Method of milling cerium compound by means of ball mill | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-07-03 | — | — | US | disclosed |
| EP-1891482-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2008-02-27 | — | — | EP | disclosed |
| WO-2006133253-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-12-14 | — | — | WO | disclosed |
| CN-1246224-C | Preparation method of high titanium content mesoppore molecular sieve | CHINA PETROCHEMICAL CORP (CN) | 2006-03-22 | — | — | CN | disclosed |
| US-20050253001-A1 | Cerium compound milling method using ball mill | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2005-11-17 | — | — | US | disclosed |
| CN-1475441-A | Preparation method of high titanium content mesoppore molecular sieve | 中国石油化工股份有限公司 | 2004-02-18 | — | — | CN | disclosed |