SCHEMBL437788

SCHEMBL437788

OC(O)CCn1nnc2ccccc21

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC9A1 P19634 8/20 0.62
EGLN3 Q9H6Z9 2/20 0.59
MAPT P10636 3/20 0.58
RAB9A P51151 3/20 0.58
NPC1 O15118 2/20 0.58
GLA P06280 1/20 0.57
TSHR P16473 1/20 0.57
KDM4E B2RXH2 1/20 0.54
GRM2 Q14416 1/20 0.53
KCNMA1 Q12791 1/20 0.51
ALDH1A1 P00352 2/20 0.51
APAF1 O14727 1/20 0.51
POLB P06746 1/20 0.51
MGAM O43451 1/20 0.50
AMY1A P0DUB6 1/20 0.50
GAA P10253 1/20 0.50
SI P14410 1/20 0.50
MGAM2 Q2M2H8 1/20 0.50
HCRTR1 O43613 1/20 0.49
LMNA P02545 1/20 0.49

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29755652 1.00 SLC9A1 (0.62) SLC9A1EGLN3MAPTRAB9ANPC1
SCHEMBL18373283 0.83 SLC9A1 (0.67) SLC9A1EGLN3MAPTRAB9ANPC1
SCHEMBL972935 0.82 APAF1 (0.62) SLC9A1EGLN3MAPTRAB9ANPC1
SCHEMBL2936169 0.80 SLC9A1 (0.68) SLC9A1EGLN3MAPTRAB9ANPC1
SCHEMBL14796568 0.80 SLC9A1 (0.79) SLC9A1EGLN3MAPTRAB9ANPC1
SCHEMBL28881718 0.79 MGAM (0.53) SLC9A1EGLN3MAPTRAB9ANPC1
SCHEMBL13780815 0.79 SLC9A1 (0.66) SLC9A1EGLN3MAPTRAB9ANPC1
SCHEMBL7667067 0.77 SLC9A1 (0.70) SLC9A1EGLN3MAPTRAB9ANPC1
SCHEMBL29482278 0.77 SLC9A1 (0.70) SLC9A1EGLN3MAPTRAB9ANPC1
SCHEMBL10248342 0.77 SLC9A1 (0.69) SLC9A1EGLN3MAPTRAB9ANPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 277 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114016031-B Quick etching liquid and preparation method thereof 深圳市松柏实业发展有限公司 2024-05-17 CN claimed
CN-114016031-A Fast etching liquid and preparation method thereof 深圳市松柏实业发展有限公司 2022-02-08 CN claimed
CN-107406752-B Polishing agent, stock solution for polishing agent, and polishing method 日立化成株式会社 2020-05-08 CN claimed
CN-102318042-B Polishing agent for polishing copper and polishing method using same HITACHI CHEMICAL CO LTD 2015-07-01 CN claimed
US-20070128872-A1 Polishing composition and polishing method SHOWA DENKO K.K. (JP) 2007-06-07 US claimed
CN-1902291-A Polishing composition and polishing method SHOWA DENKO KK (JP) 2007-01-24 CN claimed
EP-1687387-A1 POLISHING COMPOSITION COMPRISING PHOSPHATE ESTERS AND POLISHING METHOD Showa Denko K.K. (JP) 2006-08-09 EP claimed
WO-2005047409-A1 POLISHING COMPOSITION AND POLISHING METHOD SHOWA DENKO K.K. (JP) 2005-05-26 WO claimed
US-20260146199-A1 METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESSING SOLUTION FOR SEMICONDUCTOR DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-28 US disclosed
US-12588450-B2 Post-CMP cleaning liquid comprising a substituted benzene anticorrosive agent, chelant, and amine compound FUJIFILM CORPORATION (JP) 2026-03-24 US disclosed
US-12516420-B2 Chemical solution for removing precious metal, method for manufacturing chemical solution, method for treating substrate, method for manufacturing semiconductor device TOKYO OHKA KOGYO CO., LTD. (JP) 2026-01-06 US disclosed
US-12480077-B2 Aqueous cleaning liquid and method of cleaning electronic device TOKYO OHKA KOGYO CO., LTD. (JP) 2025-11-25 US disclosed
US-12480072-B2 Cleaning fluid and cleaning method FUJIFILM CORPORATION (JP) 2025-11-25 US disclosed
US-20250215126-A1 COMPOSITION, SUBSTRATE TREATMENT METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2025-07-03 US disclosed
WO-2003104350-A1 METAL POLISH COMPOSITION, POLISHING METHOD USING THE COMPOSITION AND METHOD FOR PRODUCING WAFER USING THE POLISHING METHOD SHOWA DENKO K.K. (JP) 2003-12-18 WO disclosed
US-20030219982-A1 CMP (chemical mechanical polishing) polishing liquid for metal and polishing method HITACHI CHEMICAL CO., LTD (JP) 2003-11-27 US disclosed
EP-1223609-A1 POLISHING COMPOUND FOR CHEMIMECHANICAL POLISHING AND POLISHING METHOD HITACHI CHEMICAL COMPANY, LTD. (JP) 2002-07-17 EP disclosed
US-20020017630-A1 Abrasive liquid for metal and method for polishing RENESAS ELECTRONICS CORPORATION (JP) 2002-02-14 US disclosed
EP-1150341-A1 MATERIALS FOR POLISHING LIQUID FOR METAL, POLISHING LIQUID FOR METAL, METHOD FOR PREPARATION THEREOF AND POLISHING METHOD USING THE SAME HITACHI CHEMICAL COMPANY, LTD. (JP) 2001-10-31 EP disclosed
EP-1137056-A1 ABRASIVE LIQUID FOR METAL AND METHOD FOR POLISHING HITACHI CHEMICAL COMPANY, LTD. (JP) 2001-09-26 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260146199-A1 METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESSING SOLUTION FOR SEMICONDUCTOR DEVICE AS3MT, ASH1L, HMOX2 SLC9A1 854/4885EGLN3 1170/4885MAPT 976/4885
US-12588450-B2 Post-CMP cleaning liquid comprising a substituted benzene anticorrosive agent, chelant, and amine compound SSRP1, H1-5, AOC1 SLC9A1 1507/4885EGLN3 3488/4885MAPT 4797/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.