SCHEMBL972935

SCHEMBL972935

OC(O)Cn1nnc2ccccc21

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
APAF1 O14727 1/20 0.62
POLB P06746 1/20 0.62
ALDH1A1 P00352 3/20 0.61
SLC9A1 P19634 6/20 0.59
MAPT P10636 2/20 0.58
TDP1 Q9NUW8 2/20 0.58
HCRTR1 O43613 1/20 0.58
LMNA P02545 1/20 0.58
TP53 P04637 1/20 0.58
HTT P42858 1/20 0.58
GRM2 Q14416 1/20 0.56
RAB9A P51151 3/20 0.56
NPC1 O15118 2/20 0.56
SMN1; SMN2 Q16637 1/20 0.56
NPSR1 Q6W5P4 1/20 0.56
KCNMA1 Q12791 1/20 0.54
EGLN3 Q9H6Z9 1/20 0.54
MGAM O43451 1/20 0.53
AMY1A P0DUB6 1/20 0.53
GAA P10253 1/20 0.53

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9772257 0.86 APAF1 (0.59) APAF1POLBALDH1A1SLC9A1MAPT
SCHEMBL11442537 0.86 APAF1 (0.68) APAF1POLBALDH1A1SLC9A1MAPT
SCHEMBL437789 0.84 ALDH1A1 (0.65) APAF1POLBALDH1A1SLC9A1MAPT
SCHEMBL7560053 0.84 ALDH1A1 (0.60) APAF1POLBALDH1A1SLC9A1MAPT
SCHEMBL29755652 0.82 SLC9A1 (0.62) APAF1POLBALDH1A1SLC9A1MAPT
SCHEMBL437788 0.82 SLC9A1 (0.62) APAF1POLBALDH1A1SLC9A1MAPT
SCHEMBL7716431 0.81 APAF1 (0.67) APAF1POLBALDH1A1SLC9A1MAPT
SCHEMBL21304645 0.81 APAF1 (0.75) APAF1POLBALDH1A1SLC9A1MAPT
SCHEMBL260406 0.79 SLC9A1 (0.66) APAF1POLBSLC9A1MAPTTDP1
SCHEMBL31234269 0.78 SLC9A1 (0.70) SLC9A1MAPTTDP1GRM2RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 103 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250377594-A1 RESIST COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN AND METHOD FOR PRODUCING PLATED MOLDED ARTICLE SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2025-12-11 US disclosed
US-20250321482-A1 RESIST COMPOSITION, DRY FILM RESIST, METHOD FOR PRODUCING DRY FILM RESIST, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING PLATED OBJECT SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2025-10-16 US disclosed
US-20250278022-A1 COMPOUND, POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-09-04 US disclosed
US-20250231484-A1 RESIST COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN AND METHOD FOR PRODUCING PLATED MOLDED ARTICLE SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2025-07-17 US disclosed
US-20250197783-A1 PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2025-06-19 US disclosed
CN-112198220-B Gas sensor and method of sensing a gas phase analyte 杜邦电子材料国际有限责任公司 2025-05-09 CN disclosed
US-12164229-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-12-10 US disclosed
CN-111381439-B Resist composition and method for producing resist pattern 住友化学株式会社 2024-07-19 CN disclosed
CN-106019831-B Resist composition method for producing resist pattern 住友化学株式会社 2024-04-16 CN disclosed
US-11906493-B2 Gas sensors and methods of sensing a gas-phase analyte ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2024-02-20 US disclosed
US-20050176259-A1 Method for removing photoresist TOKYO OHKA KOGYO CO., LTD. (JP) 2005-08-11 US disclosed
EP-1550912-A1 METHOD FOR REMOVING PHOTORESIST TOKYO OHKA KOGYO CO., LTD. (JP) 2005-07-06 EP disclosed
US-20050019688-A1 Photoresist stripping solution and a method of stripping photoresists using the same WAKIYA KAZUMASA (JP) 2005-01-27 US disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-6638899-B1 Solution which comprises salt of hydrofluoric acid with base free from metal ions, water soluble organic solvent, basic substance and water, and which has pH value of from 8.5 to 10.0 TOKYO OHKA KOGYO CO., LTD. (JP) 2003-10-28 US disclosed
US-20030138737-A1 Photoresist stripping solution and a method of stripping photoresists using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2003-07-24 US disclosed
US-20030134234-A1 Photoresist stripping solution and a method of stripping photoresists using the same WAKIYA KAZUMASA (JP) 2003-07-17 US disclosed
US-20010021489-A1 Photoresist stripping solution and a method of stripping photoresists using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2001-09-13 US disclosed
US-6218087-B1 USING MIXTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2001-04-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12164229-B2 Resist composition and method for producing resist pattern HACL2, ACAD10, HSD17B10 APAF1 4079/4885POLB 719/4885ALDH1A1 1409/4885
US-20250278022-A1 COMPOUND, POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN ABCC1, SLC11A2, RER1 APAF1 4125/4885POLB 401/4885ALDH1A1 2612/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.