Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPC1 | O15118 | 3/20 | 0.34 |
| ▸ | RAB9A | P51151 | 3/20 | 0.34 |
| ▸ | LMNA | P02545 | 1/20 | 0.34 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.34 |
| ▸ | CASP3 | P42574 | 1/20 | 0.34 |
| ▸ | ATM | Q13315 | 1/20 | 0.34 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.34 |
| ▸ | SENP8 | Q96LD8 | 1/20 | 0.34 |
| ▸ | SENP7 | Q9BQF6 | 1/20 | 0.34 |
| ▸ | SENP6 | Q9GZR1 | 1/20 | 0.34 |
| ▸ | HDAC11 | Q96DB2 | 1/20 | 0.33 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.33 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.33 |
| ▸ | HRH3 | Q9Y5N1 | 8/20 | 0.33 |
| ▸ | MAOB | P27338 | 3/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | DRD2 | P14416 | 1/20 | 0.32 |
| ▸ | DRD3 | P35462 | 1/20 | 0.32 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.32 |
| ▸ | POLB | P06746 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL503800 | 0.85 | ALDH1A1 (0.41) | NPC1RAB9ALMNAMAPK1SMN1; SMN2 | |
| Sulfuric Acid SCHEMBL2920577 | 0.85 | NPC1 (0.41) | NPC1RAB9ALMNAMAPK1CASP3 | |
| SCHEMBL5412252 | 0.83 | HSD11B1 (0.39) | NPC1RAB9ALMNAMAPK1CASP3 | |
| Sulfuric Acid SCHEMBL2920580 | 0.82 | NPC1 (0.39) | NPC1RAB9ALMNAMAPK1CASP3 | |
| SCHEMBL5416231 | 0.81 | HSD11B1 (0.40) | NPC1RAB9ALMNAMAPK1CASP3 | |
| SCHEMBL1803564 | 0.80 | HDAC6 (0.39) | LMNASMN1; SMN2HDAC6MAPTCYP2C9 | |
| SCHEMBL5412549 | 0.80 | CA1 (0.38) | NPC1RAB9ALMNAMAPK1CASP3 | |
| SCHEMBL5409949 | 0.79 | CA2 (0.41) | LMNAHDAC11HDAC8HDAC6 | |
| SCHEMBL5398687 | 0.79 | NPC1 (0.34) | NPC1RAB9ALMNAMAPK1CASP3 | |
| SCHEMBL3753445 | 0.78 | LMNA (0.39) | NPC1RAB9ALMNAMAPK1CASP3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2477073-A1 | Resist composition for electron beam, EUV or X-ray | Fujifilm Corporation (JP) | 2012-07-18 | — | — | EP | disclosed |
| US-7521168-B2 | Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. | FUJIFILM CORPORATION (JP) | 2009-04-21 | — | — | US | disclosed |
| EP-1076261-B1 | Negative resist composition | FUJIFILM CORP (JP) | 2008-06-25 | — | — | EP | disclosed |
| US-7312014-B2 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2007-12-25 | — | — | US | disclosed |
| US-7214465-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-6887647-B2 | Negative-working resist composition for electron beams or x-rays | FUJI PHOTO FILM CO., LTD. (JP) | 2005-05-03 | — | — | US | disclosed |
| US-6887645-B2 | Negative resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2005-05-03 | — | — | US | disclosed |
| US-6824948-B1 | NEGATIVE-WORKING RESIST COMPOSITION WHICH CAN BE SUITABLY USED FOR FINE WORKING OF SEMICONDUCTOR DEVICES USING A HIGH ENERGY SUCH AS ELECTRON BEAMS, ETC. | FUJI PHOTO FILM CO., LTD. (JP) | 2004-11-30 | — | — | US | disclosed |
| US-20040170918-A1 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2004-09-02 | — | — | US | disclosed |
| US-6773862-B2 | Negative resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2004-08-10 | — | — | US | disclosed |
| US-6489080-B2 | CONTAINING ACID GENERATOR | FUJI PHOTO FILM CO., LTD. (JP) | 2002-12-03 | — | — | US | disclosed |
| US-20020136980-A1 | Positive resist composition to be irradiated with one of an electron beam and X-ray | FUJI PHOTO FILM CO., LTD. | 2002-09-26 | — | — | US | disclosed |
| US-20020061462-A1 | Negative resist composition | FUJI PHOTO FILM CO., LTD. | 2002-05-23 | — | — | US | disclosed |
| US-20020058206-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2002-05-16 | — | — | US | disclosed |
| EP-1193555-A1 | Negative resist composition | Fuji Photo Film Co., Ltd. (JP) | 2002-04-03 | — | — | EP | disclosed |
| EP-1193556-A1 | Positive resist composition | Fuji Photo Film Co., Ltd. (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-20020015916-A1 | POSITIVE RESIST COMPOSITION | FUJI PHOTO FILM CO., LTD. (JP) | 2002-02-07 | — | — | US | disclosed |
| US-20010036590-A1 | Chemical amplification type negative-working resist composition for electron beams or X-rays | FUJIFILM CORPORATION (JP) | 2001-11-01 | — | — | US | disclosed |
| US-6265135-B1 | ARYL SULFONIUM OR IODONIUM COMPOUND WHICH GENERATES BENZENE-, NAPHTHALENE- OR ANTHRACENESULFONIC ACID WHICH IS SUBSTITUTED BY AT LEAST ONE FLUORINE ATOM AND/OR AT LEAST ONE GROUP CONTAINING A FLUORINE ATOM. | FUJI PHOTO FILM CO., LTD. (JP) | 2001-07-24 | — | — | US | disclosed |
| EP-1076261-A1 | Negative resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2001-02-14 | — | — | EP | disclosed |