SCHEMBL4403403

SCHEMBL4403403

O=Cc1cccc2c3c(ccc12)C=CC3

nearest known ligand 0.34

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 2/20 0.34
LMNA P02545 2/20 0.34
KMT2A Q03164 2/20 0.34
THRB P10828 1/20 0.34
BLM P54132 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
CYP2A6 P11509 1/20 0.32
ERN1 O75460 2/20 0.32
CCR1 P32246 1/20 0.31
CCR5 P51681 1/20 0.31
CCR8 P51685 1/20 0.31
KDM4E B2RXH2 1/20 0.30
PABPC1 P11940 1/20 0.30
HTT P42858 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
PTPN1 P18031 1/20 0.30
MAOA P21397 1/20 0.30
MAOB P27338 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4408128 0.84 MEN1 (0.32) MEN1LMNAKMT2ATHRBBLM
SCHEMBL4401562 0.81 MCL1 (0.38) MEN1LMNAKMT2ATHRBBLM
SCHEMBL2859416 0.80 MEN1 (0.41) MEN1LMNAKMT2ATHRBBLM
SCHEMBL29561776 0.80 MEN1 (0.41) MEN1LMNAKMT2ATHRBBLM
SCHEMBL27718737 0.79 MEN1 (0.39) MEN1LMNAKMT2ATHRBBLM
SCHEMBL4401581 0.78 MEN1 (0.35) MEN1LMNAKMT2ATHRBBLM
SCHEMBL4438638 0.75 CYP2A6 (0.38) MEN1LMNAKMT2ATHRBBLM
SCHEMBL2968366 0.74 PNMT (0.42)
SCHEMBL4403298 0.73 MEN1 (0.34) MEN1LMNAKMT2ATHRBBLM
SCHEMBL4245330 0.73 MEN1 (0.61) MEN1LMNAKMT2ATHRBBLM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8877422-B2 Resist underlayer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-04 US disclosed
US-8877422-B2 Resist underlayer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-04 US disclosed
US-20120108071-A1 RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed
US-20120108071-A1 RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed
EP-2447775-A1 Resist underlayer film composition and patterning process using the same Shin-Etsu Chemical Co., Ltd. (JP) 2012-05-02 EP disclosed