⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3871343 | 0.84 | — | — | |
| SCHEMBL4992959 | 0.79 | SLC6A4 (0.34) | — | |
| Trifluoromethanesulfonic Acid SCHEMBL36229 | 0.79 | BRD4 (0.32) | — | |
| Trifluoromethanesulfonic Acid SCHEMBL36187 | 0.78 | ACHE (0.33) | — | |
| SCHEMBL445661 | 0.77 | CA1 (0.31) | — | |
| SCHEMBL444817 | 0.76 | CA1 (0.33) | — | |
| SCHEMBL4994429 | 0.76 | HSP90AA1 (0.32) | — | |
| SCHEMBL3872282 | 0.75 | CNR2 (0.30) | — | |
| SCHEMBL447416 | 0.75 | TSHR (0.34) | — | |
| SCHEMBL5866195 | 0.74 | ALDH1A1 (0.34) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 224 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12631962-B2 | Resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2026-05-19 | — | — | US | disclosed |
| US-12624392-B2 | Molecular array generation using photoresist | 10X GENOMICS, INC. (US) | 2026-05-12 | — | — | US | disclosed |
| US-12393115-B2 | Positive working photosensitive material | MERCK PATENT GMBH (DE) | 2025-08-19 | — | — | US | disclosed |
| EP-4516394-A2 | HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST | 10x Genomics, Inc. (US) | 2025-03-05 | — | — | EP | disclosed |
| EP-4481059-A2 | MOLECULAR ARRAY GENERATION USING PHOTORESIST | 10x Genomics, Inc. (US) | 2024-12-25 | — | — | EP | disclosed |
| EP-4405094-B1 | HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST | 10X GENOMICS INC (US) | 2024-12-18 | — | — | EP | disclosed |
| EP-4271511-B1 | MOLECULAR ARRAY GENERATION USING PHOTORESIST | 10X GENOMICS INC (US) | 2024-10-09 | — | — | EP | disclosed |
| WO-2024176973-A1 | METHOD FOR PRODUCING PURIFIED RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND PURIFIED RESIST COMPOSITION | 東京応化工業株式会社 | 2024-08-29 | — | — | WO | disclosed |
| EP-4405094-A1 | HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST | 10X Genomics, Inc. (US) | 2024-07-31 | — | — | EP | disclosed |
| US-20240231231-A1 | METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-20060234153-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060234154-A1 | Mixture containing acid generator and free radical catalyst; acrylated ester monomer | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| EP-1652866-A1 | ACRYLIC POLYMERS AND RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2006-05-03 | — | — | EP | disclosed |
| EP-1602975-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-12-07 | — | — | EP | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-6908722-B2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-06-21 | — | — | US | disclosed |
| US-20040048192-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-03-11 | — | — | US | disclosed |
| US-20030219680-A1 | Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams | JSR CORPORATION (JP) | 2003-11-27 | — | — | US | disclosed |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| EP-1270553-A2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-01-02 | — | — | EP | disclosed |