SCHEMBL445661

SCHEMBL445661

Cc1cc([S+]2CCCC2)cc(C)c1O.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.31

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.31
CA2 P00918 2/20 0.31
MMP1 P03956 2/20 0.31
MMP2 P08253 2/20 0.31
MMP9 P14780 2/20 0.31
MMP8 P22894 2/20 0.31
MMP13 P45452 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL444817 0.99 CA1 (0.33) CA1CA2MMP1MMP2MMP9
SCHEMBL6704953 0.87
Trifluoromethanesulfonic Acid SCHEMBL36229 0.86 BRD4 (0.32) CA1CA2
Trifluoromethanesulfonic Acid SCHEMBL36187 0.85 ACHE (0.33)
SCHEMBL4419486 0.80 CA1 (0.34) CA1CA2
SCHEMBL5439039 0.80 ALDH1A1 (0.35) CA1CA2MMP1MMP2MMP9
SCHEMBL2898445 0.80 CA1 (0.33) CA1CA2MMP1MMP2MMP9
SCHEMBL3871480 0.79 TSHR (0.31)
SCHEMBL7255767 0.79
SCHEMBL2901096 0.79 CA2 (0.35) CA1CA2MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 373 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12631962-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
US-12624392-B2 Molecular array generation using photoresist 10X GENOMICS, INC. (US) 2026-05-12 US disclosed
US-12560866-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound JSR CORPORATION (JP) 2026-02-24 US disclosed
US-12393115-B2 Positive working photosensitive material MERCK PATENT GMBH (DE) 2025-08-19 US disclosed
US-12386260-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound JSR CORPORATION (JP) 2025-08-12 US disclosed
CN-114651212-B Positive photosensitive material 默克专利股份有限公司 2025-05-02 CN disclosed
EP-4516394-A2 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2025-03-05 EP disclosed
EP-4481059-A2 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2024-12-25 EP disclosed
EP-4405094-B1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-12-18 EP disclosed
EP-4271511-B1 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-10-09 EP disclosed
US-6482568-B1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-11-19 US disclosed
US-20020132181-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-09-19 US disclosed
EP-1225480-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-07-24 EP disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20020009667-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
US-20020009668-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
EP-1164434-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
EP-1162506-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-12 EP disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12631962-B2 Resist composition and method for forming resist pattern TERB1, TERF2, LSM8 CA1 577/4885CA2 677/4885MMP1 4479/4885
US-12624392-B2 Molecular array generation using photoresist POLL, LIG4, LIG3 CA1 3957/4885CA2 2965/4885MMP1 4359/4885
US-12560866-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound RAD51, RER1, RAD1 CA1 129/4885CA2 1100/4885MMP1 2888/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.