SCHEMBL447416

SCHEMBL447416

CCCCOc1ccc2cc([S+]3CCCC3)ccc2c1.O=S(=O)([O-])C(F)(F)C(F)(F)C1CC2CCC1C2

nearest known ligand 0.34

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.34
MAPK1 P28482 1/20 0.34
RECQL P46063 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
CRBN Q96SW2 1/20 0.33
BCHE P06276 1/20 0.32
CACNA1B Q00975 2/20 0.31
CYP2D6 P10635 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4992959 0.84 SLC6A4 (0.34) TSHR
SCHEMBL3871343 0.84
Trifluoromethanesulfonic Acid SCHEMBL449172 0.82 TSHR (0.38) TSHRMAPK1RECQLL3MBTL1
SCHEMBL446601 0.81 TSHR (0.37) TSHRMAPK1RECQLL3MBTL1BCHE
SCHEMBL445116 0.80 TSHR (0.36) TSHRMAPK1RECQLL3MBTL1BCHE
SCHEMBL4996693 0.79 TSHR (0.35) TSHRMAPK1RECQLL3MBTL1
SCHEMBL447052 0.79 SLC2A1 (0.36) TSHRL3MBTL1BCHE
SCHEMBL29429148 0.79 SLC2A1 (0.36) TSHRL3MBTL1BCHE
SCHEMBL4994525 0.78 THRA (0.35) TSHRMAPK1RECQLL3MBTL1
SCHEMBL5002067 0.78 THRA (0.35) TSHRMAPK1RECQLL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 206 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12631962-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
US-12624392-B2 Molecular array generation using photoresist 10X GENOMICS, INC. (US) 2026-05-12 US disclosed
US-12393115-B2 Positive working photosensitive material MERCK PATENT GMBH (DE) 2025-08-19 US disclosed
EP-4516394-A2 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2025-03-05 EP disclosed
EP-4481059-A2 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2024-12-25 EP disclosed
EP-4405094-B1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-12-18 EP disclosed
EP-4271511-B1 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-10-09 EP disclosed
WO-2024176973-A1 METHOD FOR PRODUCING PURIFIED RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND PURIFIED RESIST COMPOSITION 東京応化工業株式会社 2024-08-29 WO disclosed
EP-4405094-A1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X Genomics, Inc. (US) 2024-07-31 EP disclosed
US-20240231231-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2024-07-11 US disclosed
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2012-03-15 US disclosed
US-20110076619-A1 METHOD FOR MODIFYING FIRST FILM AND COMPOSITION FOR FORMING ACID TRANSFER RESIN FILM USED THEREFOR JSR CORPORATION (JP) 2011-03-31 US disclosed
US-20110027718-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2011-02-03 US disclosed
US-20100190109-A1 ACID TRANSFER COMPOSITION, ACID TRANSFER FILM, AND PATTERN FORMING METHOD JSR CORPORATION (JP) 2010-07-29 US disclosed
US-20090053649-A1 Lactone copolymer and radiation-sensitive resin composition JSR CORPORATION 2009-02-26 US disclosed
US-7371503-B2 Sulfonium salt compound, photoacid generator, and positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2008-05-13 US disclosed
EP-1757628-A1 LACTONE COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2007-02-28 EP disclosed
US-20070042292-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-02-22 US disclosed
US-20060141383-A1 Sulfonium salts, radiation- sensitive acid generators, and positive radiator-sensitive resin compositions JSR CORPORATION (JP) 2006-06-29 US disclosed
EP-1586570-A1 SULFONIUM SALTS, RADIATION-SENSITIVE ACID GENERATORS, AND POSITIVE RADIATION-SENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2005-10-19 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12631962-B2 Resist composition and method for forming resist pattern TERB1, TERF2, LSM8 TSHR 2234/4885MAPK1 2874/4885RECQL 2678/4885
US-12624392-B2 Molecular array generation using photoresist POLL, LIG4, LIG3 TSHR 2434/4885MAPK1 2265/4885RECQL 2569/4885
US-20110027718-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND SMARCC1, RXRA, RXRB TSHR 1838/4885MAPK1 2118/4885RECQL 440/4885
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND RAD51, RER1, XRCC5 TSHR 3647/4885MAPK1 943/4885RECQL 189/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.