Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL36187

Cc1cc([S+]2CCCCC2)cc(C)c1O.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.33

Full drug profile on Sugi Atlas →

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ACHE P22303 1/20 0.33
BRD4 O60885 2/20 0.32
KMT2A Q03164 1/20 0.31
GPR3 P46089 1/20 0.31
CYP2C9 P11712 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL36229 0.98 BRD4 (0.32) ACHEBRD4KMT2AGPR3CYP2C9
SCHEMBL4419486 0.86 CA1 (0.34) ACHEBRD4KMT2ACYP2C9
SCHEMBL445661 0.85 CA1 (0.31)
SCHEMBL444817 0.84 CA1 (0.33)
SCHEMBL134940 0.82 ACHE (0.44) ACHEKMT2ACYP2C9
SCHEMBL7047390 0.81 BRD4 (0.45) ACHEBRD4KMT2A
SCHEMBL136578 0.80 CA1 (0.44) ACHEKMT2ACYP2C9
SCHEMBL3871324 0.80 KMT2A (0.35) KMT2ACYP2C9
SCHEMBL445118 0.78
SCHEMBL3870640 0.77 CYTH2 (0.44) BRD4KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 267 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2584409-B1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2021-04-28 EP disclosed
EP-2060600-B1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO LTD (JP) 2017-12-27 EP disclosed
EP-2093213-B1 Positive resist composition and method of forming a resist pattern using the same TOKYO OHKA KOGYO CO LTD (JP) 2017-10-04 EP disclosed
US-9618842-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9618843-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9494860-B2 Resist composition, method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
EP-2088466-B1 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO LTD (JP) 2016-10-26 EP disclosed
EP-2073060-B1 Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2016-08-24 EP disclosed
US-9250531-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2016-02-02 US disclosed
US-9244349-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-01-26 US disclosed
US-7491485-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-17 US disclosed
US-20090042131-A1 acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-12 US disclosed
US-7488568-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-10 US disclosed
US-20090023097-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080311515-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080292988-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2008-11-27 US disclosed
US-20080268376-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-30 US disclosed
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation GNG2, ACAD9, SCO2 ACHE 4699/4885BRD4 4015/4885KMT2A 4210/4885
US-20090042131-A1 acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group ADH1A, F12, DDAH1 ACHE 2624/4885BRD4 4407/4885KMT2A 3775/4885
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR RER1, ACAD9, RRS1 ACHE 2935/4885BRD4 1848/4885KMT2A 3621/4885
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN C1R, CYP1B1, C1S ACHE 4766/4885BRD4 1899/4885KMT2A 2523/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.