SCHEMBL445901

SCHEMBL445901

CCOC(C)COC(=O)CC

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NAAA Q02083 1/20 0.38
MAPT P10636 1/20 0.36
MGAM O43451 1/20 0.36
GAA P10253 1/20 0.36
SI P14410 1/20 0.36
MGAM2 Q2M2H8 1/20 0.36
SOAT1 P35610 1/20 0.36
LMNA P02545 3/20 0.35
ALDH1A1 P00352 6/20 0.34
CYP1A2 P05177 1/20 0.34
HPGD P15428 1/20 0.34
CYP2C19 P33261 1/20 0.34
BLM P54132 1/20 0.34
WRN Q14191 1/20 0.34
HIF1A Q16665 1/20 0.34
TSHR P16473 4/20 0.33
TRPA1 O75762 1/20 0.33
HSD17B10 Q99714 1/20 0.32
TDP1 Q9NUW8 3/20 0.32
CYP3A4 P08684 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2700961 0.96 NAAA (0.35) NAAAMAPTMGAMGAASI
SCHEMBL27625736 0.87 TSHR (0.38) NAAAMAPTMGAMGAASI
SCHEMBL5918169 0.83 NAAA (0.44) NAAAMAPTGAALMNAALDH1A1
SCHEMBL2586982 0.83 TSHR (0.38) MAPTMGAMGAASIMGAM2
SCHEMBL9936248 0.83 MAPT (0.34) MAPTMGAMGAASIMGAM2
SCHEMBL1464838 0.83 TDP1 (0.50) NAAAMAPTLMNAALDH1A1CYP1A2
SCHEMBL27646329 0.83 MAPT (0.46) MAPTLMNAALDH1A1CYP1A2TSHR
SCHEMBL1469447 0.82 ALDH1A1 (0.48) MAPTMGAMGAASIMGAM2
SCHEMBL9936908 0.82 TSHR (0.35) MAPTMGAMGAASIMGAM2
SCHEMBL6062167 0.82 NAAA (0.34) NAAAMAPTLMNAALDH1A1CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 387 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9472813-B2 Battery electrolyte solution containing certain ester-based solvents, and batteries containing such an electrolyte solution DOW GLOBAL TECHNOLOGIES LLC (US) 2016-10-18 US claimed
CN-104536265-A Photoresist composition ZHEJIANG YONGTAI TECHNOLOGY CO LTD 2015-04-22 CN claimed
CN-103857751-A Composition for preparing alignment layer, alignment layer prepared therefrom, and retardation film DONGWOO FINE CHEM CO LTD 2014-06-11 CN claimed
EP-2652832-A1 BATTERY ELECTROLYTE SOLUTION CONTAINING CERTAIN ESTER-BASED SOLVENTS, AND BATTERIES CONTAINING SUCH AN ELECTROLYTE SOLUTION Dow Global Technologies LLC (US) 2013-10-23 EP claimed
US-20130260229-A1 BATTERY ELECTROLYTE SOLUTION CONTAINING CERTAIN ESTER-BASED SOLVENTS, AND BATTERIES CONTAINING SUCH AN ELECTROLYTE SOLUTION DOW GLOBAL TECHNOLOGIES LLC (US) 2013-10-03 US claimed
WO-2012082760-A1 BATTERY ELECTROLYTE SOLUTION CONTAINING CERTAIN ESTER-BASED SOLVENTS, AND BATTERIES CONTAINING SUCH AN ELECTROLYTE SOLUTION DOW GLOBAL TECHNOLOGIES LLC (US) 2012-06-21 WO claimed
CN-101044435-B Photosensitive composition removing liquid SHOWA DENKO KK 2010-09-08 CN claimed
CN-100429248-C Manufacturing method of acrylic copolymer resin for layer insulation film for TFT-LCD DONGJIN SAEMIGUNG CO LTD (KR) 2008-10-29 CN claimed
CN-101059653-A Photosensitive resin composition DONGJIN SEMICHEM CO LTD (KR) 2007-10-24 CN claimed
CN-1693322-A Manufacturing method of acrylic copolymer resin for layer insulation film for TFT-LCD DONGJIN SAEMIGUNG CO LTD (KR) 2005-11-09 CN claimed
US-20260133489-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER AND SEMICONDUCTOR DEVICE USING THE SAME SAMSUNG SDI CO LTD (KR) 2026-05-14 US disclosed
US-20260063996-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER AND SEMICONDUCTOR DEVICE USING THE SAME SAMSUNG SDI CO LTD (KR) 2026-03-05 US disclosed
US-20260062515-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER, AND SEMICONDUCTOR DEVICE USING THE SAME SAMSUNG SDI CO LTD (KR) 2026-03-05 US disclosed
US-20260003271-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER, AND SEMICONDUCTOR DEVICE USING THE SAME SAMSUNG SDI CO LTD (KR) 2026-01-01 US disclosed
US-20250355351-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER USING THE SAME, DISPLAY DEVICE, AND MANUFACTURING METHOD OF PHOTOSENSITIVE RESIN LAYER SAMSUNG SDI CO LTD (KR) 2025-11-20 US disclosed
CN-1427043-A Particle, composition and protective film JSR CORP (JP) 2003-07-02 CN disclosed
CN-1427306-A Radiation sensitive refractivity change composition and method for changing refractivity JSR CORP (JP) 2003-07-02 CN disclosed
CN-1414048-A Solidified composition forming as protective membrane, forming method of the membrance and the membrane JSR CORP (JP) 2003-04-30 CN disclosed
CN-1388919-A Composition having refractive index sensitively changealbe by radiation and method for forming refractive index pattern JSR CORP (JP) 2003-01-01 CN disclosed
US-4353710-A ADDING ESTER OR ETHER OF METHANOL OR ETHANOL TEXACO INC. (US) 1982-10-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20250355351-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER USING THE SAME, DISPLAY DEVICE, AND MANUFACTURING METHOD OF PHOTOSENSITIVE RESIN LAYER LCP1, CD79B, ARCN1 NAAA 4165/4885MAPT 420/4885MGAM 3551/4885
US-20260003271-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER, AND SEMICONDUCTOR DEVICE USING THE SAME KDM1A, KDM2A, KDM3A NAAA 4112/4885MAPT 3396/4885MGAM 4697/4885
US-20260133489-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER AND SEMICONDUCTOR DEVICE USING THE SAME ASH2L, RER1, ARCN1 NAAA 4199/4885MAPT 2002/4885MGAM 4662/4885
US-20260062515-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER, AND SEMICONDUCTOR DEVICE USING THE SAME RPS4Y1, ASH2L, KDM4D NAAA 3847/4885MAPT 2819/4885MGAM 4772/4885
US-20260063996-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAYER AND SEMICONDUCTOR DEVICE USING THE SAME ASH2L, FCER2, TAS1R2 NAAA 4529/4885MAPT 2580/4885MGAM 4471/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.