SCHEMBL447143

SCHEMBL447143

CS(=O)(=O)c1ccc(S(OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.42

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CA1 P00915 8/20 0.42
CA2 P00918 8/20 0.42
HSD11B1 P28845 1/20 0.38
JAK2 O60674 1/20 0.38
JAK3 P52333 1/20 0.38
PTK2 Q05397 1/20 0.38
PTGS2 P35354 7/20 0.37
KIF11 P52732 1/20 0.35
NR1H2 P55055 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL447232 0.99 CA1 (0.41) CA1CA2HSD11B1JAK2JAK3
SCHEMBL4535203 0.91 CA2 (0.44) CA1CA2HSD11B1NR1H2
SCHEMBL965542 0.91 CA2 (0.44) CA1CA2HSD11B1NR1H2
SCHEMBL60138 0.91 CA2 (0.44) CA1CA2HSD11B1NR1H2
SCHEMBL60438 0.91 CA2 (0.44) CA1CA2HSD11B1NR1H2
SCHEMBL51400 0.90 CA1 (0.43) CA1CA2HSD11B1NR1H2
SCHEMBL3130060 0.89 CA1 (0.42) CA1CA2HSD11B1NR1H2
SCHEMBL3132826 0.89 CA1 (0.42) CA1CA2HSD11B1NR1H2
SCHEMBL546899 0.89 CA1 (0.42) CA1CA2HSD11B1NR1H2
SCHEMBL3132983 0.89 CA1 (0.42) CA1CA2HSD11B1NR1H2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 246 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12631962-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
US-12624392-B2 Molecular array generation using photoresist 10X GENOMICS, INC. (US) 2026-05-12 US disclosed
US-12393115-B2 Positive working photosensitive material MERCK PATENT GMBH (DE) 2025-08-19 US disclosed
EP-4516394-A2 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2025-03-05 EP disclosed
EP-4481059-A2 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2024-12-25 EP disclosed
EP-4405094-B1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-12-18 EP disclosed
EP-4271511-B1 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-10-09 EP disclosed
WO-2024176973-A1 METHOD FOR PRODUCING PURIFIED RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND PURIFIED RESIST COMPOSITION 東京応化工業株式会社 2024-08-29 WO disclosed
EP-4405094-A1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X Genomics, Inc. (US) 2024-07-31 EP disclosed
US-20240231231-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2024-07-11 US disclosed
US-20100190109-A1 ACID TRANSFER COMPOSITION, ACID TRANSFER FILM, AND PATTERN FORMING METHOD JSR CORPORATION (JP) 2010-07-29 US disclosed
US-20100068650-A1 POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION JSR CORPORATION (JP) 2010-03-18 US disclosed
EP-2131240-A1 POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION JSR Corporation (JP) 2009-12-09 EP disclosed
US-20090202945-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-08-13 US disclosed
EP-2003148-A9 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2009-04-22 EP disclosed
US-20090053649-A1 Lactone copolymer and radiation-sensitive resin composition JSR CORPORATION 2009-02-26 US disclosed
EP-2003148-A2 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2008-12-17 EP disclosed
EP-1757628-A1 LACTONE COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2007-02-28 EP disclosed
EP-1757980-A1 Radiation sensitive resin composition JSR Corporation (JP) 2007-02-28 EP disclosed
US-20070042292-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-02-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12631962-B2 Resist composition and method for forming resist pattern TERB1, TERF2, LSM8 CA1 577/4885CA2 677/4885HSD11B1 3215/4885
US-12624392-B2 Molecular array generation using photoresist POLL, LIG4, LIG3 CA1 3957/4885CA2 2965/4885HSD11B1 3167/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.