Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 2/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.31 |
| ▸ | CNR2 | P34972 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.30 |
| ▸ | MEN1 | O00255 | 1/20 | 0.30 |
| ▸ | POLB | P06746 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.30 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3390499 | 0.91 | HSD11B1 (0.36) | HSD11B1ALDH1A1CNR2MAPTKMT2A | |
| SCHEMBL6342395 | 0.88 | — | — | |
| SCHEMBL503907 | 0.87 | APP (0.32) | — | |
| SCHEMBL217323 | 0.86 | ALDH1A1 (0.32) | HSD11B1ALDH1A1CNR2SMN1; SMN2HSD17B10 | |
| SCHEMBL447472 | 0.85 | ACHE (0.35) | HSD11B1ALDH1A1CNR2KMT2A | |
| SCHEMBL6339049 | 0.85 | HSD11B1 (0.30) | HSD11B1 | |
| Lithium Ion SCHEMBL1458084 | 0.84 | ALDH1A1 (0.36) | ALDH1A1CNR2SMN1; SMN2HSD17B10MAPT | |
| SCHEMBL20162191 | 0.84 | ALDH1A1 (0.36) | ALDH1A1CNR2SMN1; SMN2HSD17B10MAPT | |
| SCHEMBL906300 | 0.84 | ALDH1A1 (0.36) | ALDH1A1CNR2SMN1; SMN2HSD17B10MAPT | |
| SCHEMBL1401234 | 0.84 | ALDH1A1 (0.36) | ALDH1A1CNR2SMN1; SMN2HSD17B10MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 562 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-121873631-B | Spin-on carbon composition, semiconductor preparation method and semiconductor device | Jiageng Innovation Laboratory (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-122011922-A | Bottom anti-reflection coating composition and preparation and application thereof | 嘉庚创新实验室 | 2026-05-12 | — | — | CN | claimed |
| CN-120005123-A | Acrylic ester block copolymer resin, photoresist, and preparation method and application thereof | 中国石油化工股份有限公司 | 2025-05-16 | — | — | CN | claimed |
| CN-119463075-A | Poly (4-hydroxystyrene) -based block copolymer and preparation and application thereof | 微芯新材料(湖州)有限公司 | 2025-02-18 | — | — | CN | claimed |
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| CN-116102680-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-02-13 | — | — | CN | claimed |
| CN-116102937-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102938-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102939-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-03 | — | — | CN | claimed |
| CN-115873176-B | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-09-26 | — | — | CN | claimed |
| CN-116102938-A | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-116102939-A | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-116102680-A | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-115873175-A | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-03-31 | — | — | CN | claimed |
| CN-115873176-A | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-03-31 | — | — | CN | claimed |
| CN-115685678-A | Star-shaped molecular glass film forming resin and photoresist and preparation method thereof | 南通林格橡塑制品有限公司 | 2023-02-03 | — | — | CN | claimed |
| CN-115368494-A | Hexafluoroisopropanol-containing monomer copolymer, preparation method thereof, chemical amplification type photoresist and application | 瑞红(苏州)电子化学品股份有限公司 | 2022-11-22 | — | — | CN | claimed |
| CN-114779577-A | Cyclodextrin inclusion compound molecular glass photoresist | 南通林格橡塑制品有限公司 | 2022-07-22 | — | — | CN | claimed |
| CN-114442429-A | Molecular glass photoresist of metallocene compound and preparation method thereof | 南通林格橡塑制品有限公司 | 2022-05-06 | — | — | CN | claimed |
| CN-107844028-B | Photoresist, preparation method and photoetching process thereof | 潍坊星泰克微电子材料有限公司 | 2021-04-30 | — | — | CN | claimed |