SCHEMBL447472

SCHEMBL447472

CC(C)(C)c1ccc([I+]c2ccc(C(C)(C)C)cc2)cc1.CC12CCC(C(S(=O)(=O)[O-])C1=O)C2(C)C

nearest known ligand 0.35

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ACHE P22303 1/20 0.35
HSD11B1 P28845 14/20 0.35
KMT2A Q03164 1/20 0.33
CNR2 P34972 1/20 0.32
ALDH1A1 P00352 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1356600 0.88 HSD11B1 (0.35) ACHEHSD11B1KMT2ACNR2ALDH1A1
SCHEMBL220080 0.87 HSD11B1 (0.36) ACHEHSD11B1KMT2ACNR2ALDH1A1
SCHEMBL219862 0.87 HSD11B1 (0.36) ACHEHSD11B1KMT2ACNR2ALDH1A1
SCHEMBL503907 0.85 APP (0.32)
SCHEMBL447369 0.85 HSD11B1 (0.31) HSD11B1KMT2ACNR2ALDH1A1
SCHEMBL384343 0.83 ALDH1A1 (0.34) ACHEHSD11B1KMT2ACNR2ALDH1A1
SCHEMBL6342395 0.82
Lithium Ion SCHEMBL1458084 0.80 ALDH1A1 (0.36) KMT2ACNR2ALDH1A1
SCHEMBL906300 0.80 ALDH1A1 (0.36) KMT2ACNR2ALDH1A1
SCHEMBL20162191 0.80 ALDH1A1 (0.36) KMT2ACNR2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 507 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250021002-A1 BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) 2025-01-16 US claimed
WO-2023082371-A1 BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF 上海新阳半导体材料股份有限公司 2023-05-19 WO claimed
US-8202678-B2 Wet developable bottom antireflective coating composition and method for use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-06-19 US claimed
US-20090291392-A1 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-11-26 US claimed
EP-2013659-A2 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF International Business Machines Corporation IBM (US) 2009-01-14 EP claimed
WO-2007121456-A2 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-10-25 WO claimed
US-20070243484-A1 Wet developable bottom antireflective coating composition and method for use thereof GLOBALFOUNDRIES U.S. INC. 2007-10-18 US claimed
US-6338934-B1 Hybrid resist based on photo acid/photo base blending INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-01-15 US claimed
US-6203965-B1 USEFUL AS DEEP ULTRAVIOLET RADIATION PHOTORESISTS SHIPLEY COMPANY, L.L.C. 2001-03-20 US claimed
US-6200726-B1 SELECTING A DESIRED SPACE WIDTH, SELECTING AT LEAST ONE PHOTOACID GENERATOR (PAG), WHICH WILL GENERATE TWO PHOTOACIDS UPON EXPOSURE TO ACTINIC ENERGY TO PRODUCE A DESIRED SPACE WIDTH IN HYBRID PHOTORESIST, FORMING HYBRID PHOTORESIST INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-03-13 US claimed
US-20260133494-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2026-05-14 US disclosed
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
US-12607936-B2 Film-forming composition having a multiple bond NISSAN CHEMICAL CORPORATION (JP) 2026-04-21 US disclosed
EP-4715465-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER Nissan Chemical Corporation (JP) 2026-03-25 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
US-6037107-A EXPOSING TO ACTIVATION RADIATION A POSITIVE WORKING PHOTORESIST COMPRISING AN ALKALI SOLUBLE RESIN SUBSTITUTED WITH AN ACID LABILE BLOCKING GROUP TO GENERATE HALOGENATED SULFONIC ACID BY PHOTOLYSIS SHIPLEY COMPANY, L.L.C. (US) 2000-03-14 US disclosed
EP-0938029-A2 Methods using photoresist compositions and articles produced therewith Shipley Company LLC (US) 1999-08-25 EP disclosed
EP-0901043-A1 Radiation-sensitive resin composition JSR Corporation (JP) 1999-03-10 EP disclosed
EP-0778495-A1 Resist composition with radiation sensitive acid generator International Business Machines Corporation (US) 1997-06-11 EP disclosed
US-5585220-A Resist composition with radiation sensitive acid generator INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1996-12-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 ACHE 2351/4885HSD11B1 3777/4885KMT2A 111/4885
US-20260133494-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION ETV6, ETV1, RER1 ACHE 4452/4885HSD11B1 2412/4885KMT2A 964/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L ACHE 3939/4885HSD11B1 1047/4885KMT2A 1145/4885
US-12607936-B2 Film-forming composition having a multiple bond ETV1, ARF1, ETV6 ACHE 4452/4885HSD11B1 3945/4885KMT2A 881/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.