Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC2A1 | P11166 | 2/20 | 0.36 |
| ▸ | CNR1 | P21554 | 3/20 | 0.33 |
| ▸ | CNR2 | P34972 | 3/20 | 0.33 |
| ▸ | FABP4 | P15090 | 8/20 | 0.32 |
| ▸ | FABP5 | Q01469 | 8/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.32 |
| ▸ | LMNA | P02545 | 2/20 | 0.32 |
| ▸ | HTT | P42858 | 1/20 | 0.32 |
| ▸ | MCOLN3 | Q8TDD5 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.31 |
| ▸ | BCHE | P06276 | 1/20 | 0.31 |
| ▸ | ACHE | P22303 | 1/20 | 0.31 |
| ▸ | FABP3 | P05413 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29429148 | 1.00 | SLC2A1 (0.36) | SLC2A1CNR1CNR2FABP4FABP5 | |
| SCHEMBL5866201 | 0.92 | ALDH1A1 (0.39) | FABP4MEN1KMT2AALDH1A1LMNA | |
| SCHEMBL5866195 | 0.88 | ALDH1A1 (0.34) | MEN1KMT2AALDH1A1LMNAHTT | |
| SCHEMBL2542340 | 0.87 | SLC2A1 (0.33) | SLC2A1CNR1CNR2MEN1KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL36280 | 0.83 | SLC2A1 (0.42) | SLC2A1CNR1CNR2FABP4FABP5 | |
| Trifluoromethanesulfonic Acid SCHEMBL29354733 | 0.83 | SLC2A1 (0.42) | SLC2A1CNR1CNR2FABP4FABP5 | |
| SCHEMBL190939 | 0.82 | SLC2A1 (0.38) | SLC2A1CNR1CNR2FABP4FABP5 | |
| SCHEMBL29754149 | 0.82 | SLC2A1 (0.38) | SLC2A1CNR1CNR2FABP4FABP5 | |
| SCHEMBL3872282 | 0.82 | CNR2 (0.30) | CNR2 | |
| SCHEMBL448402 | 0.81 | SLC2A1 (0.37) | SLC2A1CNR1CNR2FABP4FABP5 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 290 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12631962-B2 | Resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2026-05-19 | — | — | US | disclosed |
| US-12624392-B2 | Molecular array generation using photoresist | 10X GENOMICS, INC. (US) | 2026-05-12 | — | — | US | disclosed |
| US-12560866-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | JSR CORPORATION (JP) | 2026-02-24 | — | — | US | disclosed |
| US-12393115-B2 | Positive working photosensitive material | MERCK PATENT GMBH (DE) | 2025-08-19 | — | — | US | disclosed |
| US-12265333-B2 | Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound | JSR CORPORATION (JP) | 2025-04-01 | — | — | US | disclosed |
| EP-4481059-A2 | MOLECULAR ARRAY GENERATION USING PHOTORESIST | 10x Genomics, Inc. (US) | 2024-12-25 | — | — | EP | disclosed |
| EP-4405094-B1 | HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST | 10X GENOMICS INC (US) | 2024-12-18 | — | — | EP | disclosed |
| EP-4271511-B1 | MOLECULAR ARRAY GENERATION USING PHOTORESIST | 10X GENOMICS INC (US) | 2024-10-09 | — | — | EP | disclosed |
| US-20240231231-A1 | METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-20240167077-A1 | COVALENT ATTACHMENT OF SPLINT OLIGONUCLEOTIDES FOR MOLECULAR ARRAY GENERATION USING LIGATION | 10X GENOMICS, INC. (US) | 2024-05-23 | — | — | US | disclosed |
| EP-1652866-A1 | ACRYLIC POLYMERS AND RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2006-05-03 | — | — | EP | disclosed |
| EP-1600437-A1 | ACID GENERATORS, SULFONIC ACIDS, SULFONYL HALIDES, AND RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2005-11-30 | — | — | EP | disclosed |
| EP-1586594-A1 | ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-10-19 | — | — | EP | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-6908722-B2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-06-21 | — | — | US | disclosed |
| US-20040143082-A1 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-07-22 | — | — | US | disclosed |
| EP-1398339-A1 | POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2004-03-17 | — | — | EP | disclosed |
| US-20030219680-A1 | Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams | JSR CORPORATION (JP) | 2003-11-27 | — | — | US | disclosed |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| EP-1270553-A2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-01-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12631962-B2 | Resist composition and method for forming resist pattern | TERB1, TERF2, LSM8 | SLC2A1 3348/4885CNR1 3080/4885CNR2 3004/4885 |
| US-12624392-B2 | Molecular array generation using photoresist | POLL, LIG4, LIG3 | SLC2A1 4470/4885CNR1 3948/4885CNR2 3444/4885 |
| US-12265333-B2 | Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound | TOP1, RER1, ABCC1 | SLC2A1 2313/4885CNR1 2490/4885CNR2 3472/4885 |
| US-12560866-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | RAD51, RER1, RAD1 | SLC2A1 3218/4885CNR1 2107/4885CNR2 3529/4885 |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | ASIC1, PFAS, RARA | SLC2A1 1338/4885CNR1 1427/4885CNR2 1899/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.