SCHEMBL449173

SCHEMBL449173

CCCCOc1ccc2cc(S3(OS(=O)(=O)C(F)(F)F)CCCC3)ccc2c1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 3/20 0.39
CA1 P00915 3/20 0.39
CA2 P00918 3/20 0.39
CA7 P43166 3/20 0.39
CA9 Q16790 3/20 0.39
CA6 P23280 2/20 0.39
CA14 Q9ULX7 2/20 0.39
CA5B Q9Y2D0 2/20 0.39
CA3 P07451 1/20 0.39
CA4 P22748 1/20 0.39
TSHR P16473 2/20 0.35
L3MBTL1 Q9Y468 2/20 0.35
MEN1 O00255 2/20 0.35
KMT2A Q03164 2/20 0.35
MAPK1 P28482 1/20 0.35
RECQL P46063 1/20 0.35
CA5A P35218 1/20 0.34
MTNR1A P48039 1/20 0.34
CACNA1B Q00975 1/20 0.33
NPC1 O15118 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3150421 0.89 TSHR (0.41) CA12CA1CA2CA7CA9
SCHEMBL446602 0.88 CA1 (0.38) CA12CA1CA2CA7CA9
SCHEMBL445117 0.87 CA1 (0.39) CA12CA1CA2CA7CA9
SCHEMBL4996700 0.87 CA1 (0.37) CA12CA1CA2CA7CA9
SCHEMBL4996984 0.86 CA12 (0.42) CA12CA1CA2CA7CA9
SCHEMBL4994535 0.86 CA1 (0.36) CA12CA1CA2CA7CA9
SCHEMBL5002070 0.86 CA1 (0.36) CA12CA1CA2CA7CA9
SCHEMBL4993290 0.86 CA1 (0.36) CA12CA1CA2CA7CA9
SCHEMBL447417 0.81 TSHR (0.32) CA12CA1CA2CA7CA9
SCHEMBL3876852 0.79 THRA (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 204 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12631962-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
US-12624392-B2 Molecular array generation using photoresist 10X GENOMICS, INC. (US) 2026-05-12 US disclosed
US-12393115-B2 Positive working photosensitive material MERCK PATENT GMBH (DE) 2025-08-19 US disclosed
EP-4516394-A2 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2025-03-05 EP disclosed
EP-4481059-A2 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2024-12-25 EP disclosed
EP-4405094-B1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-12-18 EP disclosed
EP-4271511-B1 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-10-09 EP disclosed
WO-2024176973-A1 METHOD FOR PRODUCING PURIFIED RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND PURIFIED RESIST COMPOSITION 東京応化工業株式会社 2024-08-29 WO disclosed
US-20240231231-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2024-07-11 US disclosed
US-20240167077-A1 COVALENT ATTACHMENT OF SPLINT OLIGONUCLEOTIDES FOR MOLECULAR ARRAY GENERATION USING LIGATION 10X GENOMICS, INC. (US) 2024-05-23 US disclosed
EP-2444845-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2012-04-25 EP disclosed
US-20120082936-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2012-03-15 US disclosed
US-20110076619-A1 METHOD FOR MODIFYING FIRST FILM AND COMPOSITION FOR FORMING ACID TRANSFER RESIN FILM USED THEREFOR JSR CORPORATION (JP) 2011-03-31 US disclosed
US-20110027718-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2011-02-03 US disclosed
US-20100190109-A1 ACID TRANSFER COMPOSITION, ACID TRANSFER FILM, AND PATTERN FORMING METHOD JSR CORPORATION (JP) 2010-07-29 US disclosed
US-20090053649-A1 Lactone copolymer and radiation-sensitive resin composition JSR CORPORATION 2009-02-26 US disclosed
EP-1757628-A1 LACTONE COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2007-02-28 EP disclosed
EP-1757980-A1 Radiation sensitive resin composition JSR Corporation (JP) 2007-02-28 EP disclosed
US-20070042292-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-02-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12631962-B2 Resist composition and method for forming resist pattern TERB1, TERF2, LSM8 CA12 783/4885CA1 577/4885CA2 677/4885
US-12624392-B2 Molecular array generation using photoresist POLL, LIG4, LIG3 CA12 2581/4885CA1 3957/4885CA2 2965/4885
US-20110027718-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND SMARCC1, RXRA, RXRB CA12 564/4885CA1 112/4885CA2 939/4885
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND RAD51, RER1, XRCC5 CA12 3655/4885CA1 2343/4885CA2 3646/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.