SCHEMBL452106

SCHEMBL452106

CCCCCCCCS(=O)(=O)[O-].c1ccc([I+]c2ccccc2)cc1

nearest known ligand 0.47

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
CES2 O00748 1/20 0.39
CES1 P23141 1/20 0.39
PABPC1 P11940 1/20 0.39
EIF4H Q15056 1/20 0.39
CTDSP1 Q9GZU7 1/20 0.39
EPHX2 P34913 1/20 0.38
MMP1 P03956 1/20 0.38
MMP9 P14780 1/20 0.38
MMP13 P45452 1/20 0.38
PTGS2 P35354 1/20 0.38
FAAH O00519 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5447853 0.93 PABPC1 (0.41) CES2CES1PABPC1EIF4HCTDSP1
SCHEMBL2896066 0.89 PTGS2 (0.41) MMP1MMP9MMP13PTGS2
SCHEMBL2901033 0.88 ALDH1A1 (0.46)
SCHEMBL7573539 0.86 CA12 (0.38) PABPC1EIF4HCTDSP1
Toliodium SCHEMBL2895358 0.85 MCHR1 (0.44) EPHX2FAAH
SCHEMBL1802053 0.84 KCNH2 (0.39) EPHX2FAAH
SCHEMBL4452953 0.82 PSIP1 (0.43) CES2CES1
Benzene SCHEMBL4662165 0.82 EPHX2 (0.50) EPHX2FAAH
SCHEMBL449582 0.81 HDAC3 (0.40) EPHX2FAAH
Toluene SCHEMBL29011424 0.81 MCHR1 (0.43) CES2CES1PABPC1EIF4HCTDSP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 191 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12638772-B2 Resist underlayer film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2026-05-26 US disclosed
US-12631964-B2 Resist underlayer film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2026-05-19 US disclosed
CN-122043858-A EUV patterned resist formation method 亚历克斯·P·G·罗宾逊 2026-05-15 CN disclosed
US-20250085634-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-03-13 US disclosed
US-20240310730-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ACID CATALYST-SUPPORTING POLYMER NISSAN CHEMICAL CORPORATION (JP) 2024-09-19 US disclosed
US-20240184204-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING PROTECTED BASIC ORGANIC GROUP NISSAN CHEMICAL CORPORATION (JP) 2024-06-06 US disclosed
US-20240176243-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2024-05-30 US disclosed
US-11970557-B2 Polymer containing photoacid generator LG CHEM, LTD. (KR) 2024-04-30 US disclosed
EP-3010943-B1 CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM CANON KK (JP) 2024-04-03 EP disclosed
US-20230341777-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING TERMINAL-BLOCKED REACTION PRODUCT NISSAN CHEMICAL CORPORATION (JP) 2023-10-26 US disclosed
US-6337171-B1 AS A RESIST APPLICABLE TO FAR ULTRAVIOLET RAYS SUCH AS A KRF EXCIMER LASER, CHARGED PARTICLE RAYS SUCH AS ELECTRON BEAMS, AND X-RAYS JSR CORPORATION (JP) 2002-01-08 US disclosed
EP-1164434-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
EP-1164433-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
US-6235446-B1 MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER JSR CORPORATION (JP) 2001-05-22 US disclosed
US-6136500-A CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION JSR CORPORATION (JP) 2000-10-24 US disclosed
EP-1035436-A1 Resist pattern formation method JSR Corporation (JP) 2000-09-13 EP disclosed
EP-1011029-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2000-06-21 EP disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12638772-B2 Resist underlayer film-forming composition RFC2, RFC1, RFC4 CES2 3031/4885CES1 3621/4885PABPC1 1884/4885
US-12631964-B2 Resist underlayer film-forming composition TET1, OGG1, TET3 CES2 2428/4885CES1 2399/4885PABPC1 4173/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.