SCHEMBL4533183

SCHEMBL4533183

Cc1ccccc1S(=O)(=O)S(=O)(=O)c1ccccc1C

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.47
ACHE P22303 1/20 0.47
RAPGEF4 Q8WZA2 1/20 0.44
ALDH1A1 P00352 3/20 0.43
KDM4E B2RXH2 3/20 0.43
L3MBTL1 Q9Y468 2/20 0.43
TP53 P04637 1/20 0.43
TDP1 Q9NUW8 1/20 0.43
HSD11B1 P28845 1/20 0.42
RXFP1 Q9HBX9 1/20 0.42
EDNRA P25101 1/20 0.42
HTR2A P28223 1/20 0.41
HTR2C P28335 1/20 0.41
MEN1 O00255 1/20 0.41
ESR1 P03372 1/20 0.41
GAA P10253 1/20 0.41
KMT2A Q03164 1/20 0.41
ESR2 Q92731 1/20 0.41
CTSG P08311 1/20 0.41
CMA1 P23946 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27371225 0.85 CA1 (0.41) TSHRACHERAPGEF4ALDH1A1KDM4E
SCHEMBL29468592 0.83 ALDH1A1 (0.55) TSHRACHERAPGEF4ALDH1A1KDM4E
SCHEMBL475089 0.83 ALDH1A1 (0.55) TSHRACHERAPGEF4ALDH1A1KDM4E
SCHEMBL12307 0.81 L3MBTL1 (0.50) TSHRACHERAPGEF4ALDH1A1KDM4E
SCHEMBL28278788 0.81 L3MBTL1 (0.50) TSHRACHERAPGEF4ALDH1A1KDM4E
SCHEMBL79052 0.81 TSHR (0.45) TSHRACHERAPGEF4ALDH1A1KDM4E
SCHEMBL7896751 0.79 KMT2A (0.47) TSHRACHEALDH1A1TDP1EDNRA
SCHEMBL305238 0.79 TSHR (0.43) TSHRACHERAPGEF4ALDH1A1KDM4E
SCHEMBL15023628 0.79 TSHR (0.43) TSHRACHERAPGEF4ALDH1A1KDM4E
SCHEMBL7369 0.79 CA2 (0.56) CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7504193-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2009-03-17 US disclosed
US-7435527-B2 Mixture of acid generator and resin insoluble in alkaline developer and another acid decomposable compound FUJIFILM CORPORATION (JP) 2008-10-14 US disclosed
US-7157208-B2 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 US disclosed
US-20060046195-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2006-03-02 US disclosed
US-20050277060-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2005-12-15 US disclosed
US-20050186506-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2005-08-25 US disclosed
EP-1566694-A1 Positive resist composition and pattern forming method using the same Fuji Photo Film Co., Ltd. (JP) 2005-08-24 EP disclosed
US-20040253538-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2004-12-16 US disclosed
US-6183934-B1 FOE USE IN FORMATION OF PATTERN OF INSULATION FILM, PASSIVATION FILM, .ALPHA.-RAY SHIELDING FILM, OPTICAL WAVEGUIDE KABUSHIKI KAISHA TOSHIBA (JP) 2001-02-06 US disclosed
US-6143917-A FROM A DIARYL CARBONATE AND AN AMINE COMPOUND HAVING AT LEAST ONE HYDROGEN ATOM LOCATED AT AN N-POSITION UNDER MODERATE CONDITIONS AT A HIGH REACTION RATE WITH A HIGH SELECTIVITY AND WITH A HIGH YIELD UBE INDUSTRIES, LTD. (JP) 2000-11-07 US disclosed
EP-0902014-A1 PROCESS FOR PRODUCING ARYL CARBAMATES UBE INDUSTRIES LIMITED (JP) 1999-03-17 EP disclosed