SCHEMBL4535202

SCHEMBL4535202

O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.39

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CA2 P00918 18/20 0.39
CA1 P00915 17/20 0.39
MMP1 P03956 3/20 0.38
MMP2 P08253 3/20 0.38
MMP9 P14780 3/20 0.38
MMP8 P22894 3/20 0.38
MMP13 P45452 3/20 0.38
GPR3 P46089 1/20 0.34
PTPN1 P18031 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5567499 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL60437 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
Perflubutane SCHEMBL6325042 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL546546 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL60137 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL51399 0.98 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL1482705 0.98 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL6117378 0.97 CA2 (0.37) CA2CA1MMP1MMP2MMP9
Trifluoromethanesulfonic Acid SCHEMBL3413696 0.95 GPR3 (0.40) CA2CA1MMP1MMP2MMP9
SCHEMBL7569683 0.94 CA1 (0.35) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7504193-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2009-03-17 US disclosed
US-7435527-B2 Mixture of acid generator and resin insoluble in alkaline developer and another acid decomposable compound FUJIFILM CORPORATION (JP) 2008-10-14 US disclosed
US-7157208-B2 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 US disclosed
EP-1637927-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2006-03-22 EP disclosed
US-20060046195-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2006-03-02 US disclosed
US-20050277060-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2005-12-15 US disclosed
US-20050186506-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2005-08-25 US disclosed
EP-1566694-A1 Positive resist composition and pattern forming method using the same Fuji Photo Film Co., Ltd. (JP) 2005-08-24 EP disclosed
US-20040253538-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2004-12-16 US disclosed