SCHEMBL546546

SCHEMBL546546

O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.39

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CA2 P00918 18/20 0.39
CA1 P00915 17/20 0.39
MMP1 P03956 3/20 0.38
MMP2 P08253 3/20 0.38
MMP9 P14780 3/20 0.38
MMP8 P22894 3/20 0.38
MMP13 P45452 3/20 0.38
GPR3 P46089 1/20 0.34
PTPN1 P18031 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4535202 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL5567499 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL60437 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
Perflubutane SCHEMBL6325042 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL60137 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL51399 0.98 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL1482705 0.98 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL6117378 0.97 CA2 (0.37) CA2CA1MMP1MMP2MMP9
Trifluoromethanesulfonic Acid SCHEMBL3413696 0.95 GPR3 (0.40) CA2CA1MMP1MMP2MMP9
SCHEMBL7569683 0.94 CA1 (0.35) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
EP-2146247-B1 Resist patterning process and manufacturing photo mask SHINETSU CHEMICAL CO (JP) 2015-04-15 EP disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
EP-2267533-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-22 EP disclosed
EP-2244125-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-08 EP disclosed
EP-2146245-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-25 EP disclosed
US-8592133-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-26 US disclosed
US-8586282-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-19 US disclosed
US-7569324-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-7527912-B2 Photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-05 US disclosed
US-20080305411-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-11 US disclosed
EP-2000851-A1 Photomask blank, resist pattern forming process, and photomask preparation process Shin-Etsu Chemical Co., Ltd. (JP) 2008-12-10 EP disclosed
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-29 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080102405-A1 Nitrogen-containing organic compound, resist composition and patterning process MDM4, MUS81, NOP2 CA2 4422/4885CA1 4371/4885MMP1 3696/4885
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, HCN4 CA2 11/4885CA1 409/4885MMP1 4847/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST CA2 29/4885CA1 557/4885MMP1 4795/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 CA2 628/4885CA1 1417/4885MMP1 4568/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.