SCHEMBL60137

SCHEMBL60137

O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.39

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CA2 P00918 18/20 0.39
CA1 P00915 17/20 0.39
MMP1 P03956 3/20 0.38
MMP2 P08253 3/20 0.38
MMP9 P14780 3/20 0.38
MMP8 P22894 3/20 0.38
MMP13 P45452 3/20 0.38
GPR3 P46089 1/20 0.34
PTPN1 P18031 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4535202 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL5567499 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL60437 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
Perflubutane SCHEMBL6325042 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL546546 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL51399 0.98 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL1482705 0.98 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL6117378 0.97 CA2 (0.37) CA2CA1MMP1MMP2MMP9
Trifluoromethanesulfonic Acid SCHEMBL3413696 0.95 GPR3 (0.40) CA2CA1MMP1MMP2MMP9
SCHEMBL7569683 0.94 CA1 (0.35) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1503 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-121873631-B Spin-on carbon composition, semiconductor preparation method and semiconductor device Jiageng Innovation Laboratory (CN) 2026-05-26 CN claimed
US-20250377591-A1 PHOTORESIST COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO LTD (KR) 2025-12-11 US claimed
CN-119463004-B 3, 4-Dihydroxystyrene polymer, preparation thereof and photoresist composition 微芯新材料(湖州)有限公司 2025-06-10 CN claimed
CN-119923600-A Chemically amplified positive resist composition for improving pattern profile and enhancing adhesion YC化学制品株式会社 2025-05-02 CN claimed
CN-119463075-A Poly (4-hydroxystyrene) -based block copolymer and preparation and application thereof 微芯新材料(湖州)有限公司 2025-02-18 CN claimed
CN-119463004-A 3, 4-Dihydroxystyrene polymer, preparation thereof and photoresist composition 微芯新材料(湖州)有限公司 2025-02-18 CN claimed
CN-118818901-A KrF negative photoresist and preparation method and patterning forming method thereof 厦门恒坤新材料科技股份有限公司 2024-10-22 CN claimed
US-11906900-B2 Chemically amplified positive photoresist composition for improving pattern profile YOUNG CHANG CHEMICAL CO., LTD (KR) 2024-02-20 US claimed
US-11586109-B2 Chemically-amplified-type negative-type photoresist composition YOUNG CHANG CHEMICAL CO., LTD (KR) 2023-02-21 US claimed
CN-115685678-A Star-shaped molecular glass film forming resin and photoresist and preparation method thereof 南通林格橡塑制品有限公司 2023-02-03 CN claimed
US-6627382-B2 Includes perfluoro-2,2-dimethy-1,3-dioxole derivatives and vinyl derivatives; for F2 excimer laser SAMSUNG ELECTRONICS, CO., LTD. (KR) 2003-09-30 US claimed
US-20030157430-A1 Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same SAMSUNG ELECTRONICS CO., LTD. 2003-08-21 US claimed
US-6596459-B1 Photosensitive polymer having a main chain consisting of only norbornene-type alicyclic units SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-07-22 US claimed
US-6537727-B2 Improved dry etching resistance, adhesiveness to underlying material layers, line edge roughness of line patterns, contrast characteristics SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-03-25 US claimed
US-20020177067-A1 Fluoro-containing photosensitive polymer and photoresist composition containing the same SAMSUNG ELECTRONICS CO., LTD. 2002-11-28 US claimed
US-20020160303-A1 Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-10-31 US claimed
US-20020155379-A1 Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-10-24 US claimed
US-20020042016-A1 Resist composition comprising photosensitive polymer having loctone in its backbone SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-04-11 US claimed
US-20010024763-A1 Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-09-27 US claimed
US-6033826-A POLYHYDROXYSTYRENE DERIVATIVE CONTAINING AN ACETAL OR KETAL GROUP WHICH CAN EASILY BE ELIMINATED IN THE PRESENCE OF AN ACID IN THE MOLECULE AND HAVING A VERY NARROW MOLECULAR WEIGHT DISTRIBUTION GIVES A RESIST MATERIAL WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2000-03-07 US claimed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020160303-A1 Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same PAH, SUV39H1, SUV39H2 CA2 4086/4885CA1 4774/4885MMP1 4854/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.